Datasheet > 6N65K-MTQ

6N65K-MTQ

更新时间： 2023-12-06 20:02:27

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	268K
描述
N-CH

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数据手册

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6N65K-MTQ 数据手册

6N65K-MTQ

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS=0V, I_D=250μA

650

2.5

V_DS=650V, V_GS=0V

V_GS=30V, V_DS= 0V

V_GS=-30V, V_DS= 0V

μA

Forward

Reverse

100

-100

Gate-Source Leakage Current

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250μA

4.5

2.4

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS=10V, I_D=3A

Ω

C_ISS

C_OSS

C_RSS

730

V_DS=25V, V_GS=0V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

Gate to Source Charge

Gate to Drain Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

5.6

V_DS=150V, V_GS=10V, I_D=3.0A,

I_G=1mA (Note 1, 2)

2.9

Turn-On Delay Time

Turn-On Rise Time

V_DD=300V, V_GS=10V, I_D=6.0A,

R_G=25Ω, (Note1,2)

16.6

42.6

20.8

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain-Source Diode

Forward Current

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

V_SD

t_rr

I_S=6.0A, V_GS=0V

1.4

I_S=6.0A, V_GS=0V,

dI_F/dt=100A/µs (Note 1)

380

3.2

µC

Q_rr

Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

3 of 6

QW-R205-069.B

www.unisonic.com.tw

1 234 5 6

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