6N65K-MTQ
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
650
±30
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
6
A
IDM
12
A
Single Pulsed (Note 3)
EAS
380
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.2
TO-220F/TO-220F1
TO-252
36
Power Dissipation
PD
55
W
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=144mH, IAS=2.3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤6.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220F/TO-220F1
SYMBOL
RATING
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θJA
TO-252
110
TO-220F/TO-220F1
TO-252
3.47
θJC
2.27
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-069.B
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