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6N65K-MTQ PDF预览

6N65K-MTQ

更新时间: 2023-12-06 20:02:27
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
6页 268K
描述
N-CH

6N65K-MTQ 数据手册

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6N65K-MTQ  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
650  
±30  
V
Continuous Drain Current  
Pulsed Drain Current (Note 2)  
Avalanche Energy  
6
A
IDM  
12  
A
Single Pulsed (Note 3)  
EAS  
380  
mJ  
V/ns  
W
Peak Diode Recovery dv/dt (Note 4)  
dv/dt  
2.2  
TO-220F/TO-220F1  
TO-252  
36  
Power Dissipation  
PD  
55  
W
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
°C  
°C  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
3. L=144mH, IAS=2.3A, VDD=50V, RG=25 , Starting TJ = 25°C  
4. ISD6.0A, di/dt200A/μs, VDDBVDSS, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
TO-220F/TO-220F1  
SYMBOL  
RATING  
62.5  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJA  
TO-252  
110  
TO-220F/TO-220F1  
TO-252  
3.47  
θJC  
2.27  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R205-069.B  
www.unisonic.com.tw  

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