Datasheet > 6N60-P

6N60-P

更新时间： 2023-12-06 20:08:44

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友顺 - UTC		/
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描述
N-CH

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6N60-P 数据手册

6N60-P

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 600V, V_GS= 0V

V_GS= 30V, V_DS= 0V

600

μA

Forward

Reverse

100 nA

-100 nA

0.53 V/°C

Gate- Source Leakage Current

I_GSS

V_GS= -30V, V_DS= 0V

I_D=250μA, Referenced to 25°C

△BV_DSS/△T_J

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250μA

2.0

4.0

V_GS= 10V, I_D= 3A

1.2 1.75

Ω

C_ISS

C_OSS

C_RSS

751

V_DS=25V, V_GS=0V, f=1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

4.9

9.4

V_DS=50V, I_D=1.3A, V_GS=10 V

Gate-Source Charge

(Note 1, 2)

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

V_DD=30V, I_D=0.5A, R_G=25Ω

I_G= 100μA (Note 1, 2)

Turn-Off Delay Time

t_D(OFF)

t_F

230

Turn-Off Fall Time

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS= 0 V, I_S= 6 A

1.4

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

Reverse Recovery Time

t_rr

V_GS= 0 V, I_S= 6 A,

dI_F/dt = 100 A/μs (Note 1)

290

3.0

Reverse Recovery Charge

Q_RR

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

4 of 7

QW-R502-969.C

www.unisonic.com.tw

1 2 345 6 7

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