Datasheet > 6N60-P

6N60-P

更新时间： 2023-12-06 20:08:44

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6N60-P 数据手册

6N60-P

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

UNIT

Drain-Source Voltage

600

Gate-Source Voltage

±30

Avalanche Current (Note 2)

Continuous Drain Current

Pulsed Drain Current (Note 2)

I_D

I_DM

Single Pulsed (Note 3)

Repetitive (Note 2)

Peak Diode Recovery dv/dt (Note 4)

TO-220/TO-263

E_AS

260

°C

Avalanche Energy

E_AR

dv/dt

3.0

125

TO-220F/TO-220F1

TO-220F2

Power Dissipation

P_D

TO-251/TO-252

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

-55 ~ +150

T_OPR

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L = 14mH, I_AS= 6A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

4. I_SD≤ 6A, di/dt ≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

TO-220/TO-220F2

SYMBOL

RATING

62.5

UNIT

°C/W

TO-220F/TO-220F1

TO-263

Junction to Ambient

Junction to Case

θ_JA

TO-251/TO-252

TO-220/TO-263

TO-220F/TO-220F1

TO-220F2

110

1.0

3.2

θ_JC

°C/W

2.97

2.27

TO-251/TO-252

UNISONIC TECHNOLOGIES CO., LTD

3 of 7

QW-R502-969.C

www.unisonic.com.tw

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