Datasheet > 6MBP75RJ-120

6MBP75RJ-120

更新时间： 2022-01-19 03:47:00

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
22页	933K
描述
IGBTs

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数据手册

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6MBP75RJ-120 数据手册

5.3 Protection Section （Vcc＝１５Ｖ）

Item

Symbol

Ioc

Conditions

Tj=125℃

Min.

113

Typ.

Max.

Units

Over Current Protection Level

of Inverter circuit

Over Current Protection Delay time

SC Protection Delay time

tdoc

tsc

Tj=125℃

℃

Tj=125℃ Fig.4

Surface

IGBT Chips Over Heating

TjOH

150

Protection Temperature Level

Over Heating Protection Hysteresis

Over Heating Protection

ofꢀIGBT Chips

TjH

℃

TcOH

VDC=0V, Ic=0A

110

125

Protection Temperature Level

Over Heating Protection Hysteresis

Under Voltage Protection Level

Under Voltage Protection Hysteresis

Case Temperature

TcH

VUV

12.5

℃

11.0

0.2

0.5

6. Thermal Characteristics （Ｔｃ＝２５℃）

Item

Symbol

Rth(j-c)

Rth(c-f)

Min.

Typ.

Max.

0.25

0.73

Units

Junction to Case

Inverter

IGBT

FWD

℃/W

Thermal Resistance *9

Case to Fin Thermal Resistance with Compound

0.05

7. Noise Immunity

（Vdc=300V、Vcc=15V、Test Circuit Fig 5.）

Conditions

Item

Min.

±2.0

Typ.

Max.

Units

Common mode

Pulse width 1us,polarity ±,10 minuets

rectangular noise

Common mode

lightning surge

Judge：no over-current, no miss operating

Rise time 1.2us,Fall time 50usInterval 20s,10 times

Judge：no over-current, no miss operating

±5.0

8. Recommended Operating Conditions

Item

Symbol

VDC

Vcc

Min.

Typ.

Max.

800

16.5

3.0

Units

DC Bus Voltage

15.0

Power Supply Voltage of Pre-Driver

Screw Torque (M5)

13.5

2.5

9. Weight

Item

Symbol

Min.

Typ.

450

Max.

Units

Weight

*9：( For 1device ，Case is under the device )

MS6M 0711

H04-004-03

1...5 6 789 10 11...22

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