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6MBP50RA-060 PDF预览

6MBP50RA-060

更新时间: 2024-11-17 23:23:47
品牌 Logo 应用领域
其他 - ETC 电动机控制双极性晶体管
页数 文件大小 规格书
6页 277K
描述
IGBTs

6MBP50RA-060 数据手册

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IGBT IPM  
600V  
6MBP 50RA-060  
6×50A  
Intelligent Power Module ( R-Series )  
n Maximum Ratings and Characteristics  
n Outline Drawing  
Absolute Maximum Ratings ( Tc=25°C)  
Items  
Symbols  
Ratings  
Units  
Min.  
0
0
200  
0
Max.  
450  
500  
400  
600  
50  
100  
50  
198  
20  
DC Bus Voltage  
DC Bus Voltage (surge)  
VDC  
VDC(Surge)  
VSC  
VCES  
IC  
ICP  
-IC  
PC  
V
A
DC Bus Voltage (short operating)  
Collector-Emitter Voltage  
Inverter  
Collector  
Current  
Collector Power Dissipation  
Voltage of Power Supply for Driver  
Input Signal Voltage  
Continuous  
1ms  
Duty=62.6%  
One Transistor  
W
V
VCC  
VIN  
0
0
VZ  
Input Signal Current  
Alarm Signal Voltage  
Alarm Signal Current  
IIN  
VALM  
IALM  
1
VCC  
15  
mA  
V
mA  
0
Junction Temperature  
Operating Temperature  
Storage Temperature  
Tj  
TOP  
Tstg  
150  
100  
125  
-20  
-40  
°C  
Isolation Voltage  
A.C. 1min.  
Viso  
Mounting *1  
Terminals *1  
2500  
3.5  
3.5  
V
Nm  
Screw Torque  
Note: *1: Recommendable Value; 2.5 ~ 3.0 Nm (M5)  
Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )  
Items  
Symbols  
ICES  
Conditions  
VCE=600V, Input Terminal Open  
IC=50A  
Min.  
Typ.  
Typ.  
Max.  
1.0  
2.8  
Units  
mA  
V
Collector Current At Off Signal Input  
INV Collector-Emitter Saturation Voltage  
Forward Voltage of FWD  
VCE(Sat)  
VF  
-IC=50A  
3.0  
V
Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )  
Items  
Symbols  
Conditions  
fSW=0~15kHz, TC=-20~100°C  
fSW=0~15kHz, TC=-20~100°C  
On  
Off  
RIN=20kW  
Min.  
3
10  
1.00  
1.25  
Max.  
18  
65  
1.70  
1.95  
Units  
Current of P-Line Side Driver (One Unit)  
Current of N-Line Side Driver (Three Units)  
ICCP  
ICCN  
mA  
1.35  
1.60  
8.0  
VIN(th)  
Input Signal Threshold Voltage  
V
Input Zener Voltage  
VZ  
Over Heating Protection Temperature Level  
Hysteresis  
IGBT Chips Over Heating Protec. Temp. Level  
Hysteresis  
Inverter Collector Current Protection Level  
Over Current Detecting Time  
Alarm Signal Hold Time  
Limiting Resistor for Alarm  
Under Voltage Protection Level  
Hysteresis  
TCOH  
TCH  
TjOH  
TjH  
VDC=0V, IC=0A, Case Temp.  
110  
150  
75  
125  
20  
20  
°C  
Surface Of IGBT Chip  
IOC  
Tj=125°C  
Tj=25°C  
A
µs  
ms  
W
tDOC  
tALM  
RALM  
VUV  
VH  
10  
2
1500  
1.5  
1425  
11.0  
0.2  
1575  
12.5  
V
Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )  
Items  
Symbols  
Conditions  
Min.  
Typ.  
Max.  
Units  
tON  
IC=50A, VDC=300V  
0.3  
Switching Time  
tOFF  
tRR  
3.6  
0.4  
µs  
IF=50A, VDC=300V  
Thermal Characteristics  
Items  
Symbols  
Rth(j-c)  
Conditions  
Inverter IGBT  
Diode  
Min.  
Typ.  
Max.  
0.63  
1.33  
Units  
Thermal Resistance  
Rth(j-c)  
°C/W  
Rth(c-f)  
With Thermal Compound  
0.05  
 

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