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6ED003L0X-F2 PDF预览

6ED003L0X-F2

更新时间: 2022-02-26 12:52:04
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
20页 746K
描述
High voltage gate driver IC

6ED003L0X-F2 数据手册

 浏览型号6ED003L0X-F2的Datasheet PDF文件第6页浏览型号6ED003L0X-F2的Datasheet PDF文件第7页浏览型号6ED003L0X-F2的Datasheet PDF文件第8页浏览型号6ED003L0X-F2的Datasheet PDF文件第10页浏览型号6ED003L0X-F2的Datasheet PDF文件第11页浏览型号6ED003L0X-F2的Datasheet PDF文件第12页 
EiceDRIVER™  
6ED003L06-F2, 6ED003L02-F2  
3.4  
ITRIP and RCIN (Over-Current Detection Function, Pin 9, 11)  
The 6ED family 2nd generation provides an over-current detection function by connecting the ITRIP input with  
the motor current feedback. The ITRIP comparator threshold (typ 0.44 V) is referenced to VSS ground. A input  
noise filter (typ. tITRIPMIN = 230 ns) prevents the driver to detect false over-current events.  
Over-current detection generates a hard shut down of all outputs of the gate driver and provides a latched fault  
feedback at /FAULT pin. RCIN input/output pin is used to determine the reset time of the fault condition. As  
soon as ITRIP threshold is exceeded the external capacitor connected to RCIN is fully discharged. The  
capacitor is then recharged by the RCIN current generator when the over-current condition is finished. As soon  
as RCIN voltage exceeds the rising threshold of typ VRCIN,TH = 5.2 V, the fault condition releases and the driver  
returns operational following the ontrol input pins according to section 3.1.  
3.5  
VCC, VSS and COM (Low Side Supply, Pin 1, 12,13)  
VCC is the low side supply and it provides power both to input logic and to low side output power stage. Input  
logic is referenced to VSS ground as well as the under-voltage detection circuit. Output power stage is  
referenced to COM ground. COM ground is floating respect to VSS ground with a maximum range of operation  
of +/-5.7 V. A back-to-back zener structure protects grounds from noise spikes.  
The under-voltage circuit enables the device to operate at power on when a typical supply voltage higher than  
VCCUV+ is present.  
The IC shuts down all the gate drivers power outputs, when the VCC supply voltage is below VCCUV- = 9.8 V.  
This prevents the external power switches from critically low gate voltage levels during on-state and therefore  
from excessive power dissipation. Please consult the individual output characteristic of the driven transistor.  
3.6  
VB1,2,3 and VS1,2,3 (High Side Supplies, Pin 18, 20, 22, 24, 26, 28)  
VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the  
external high side power device emitter/source voltage. Due to the low power consumption, the floating driver  
stage can be supplied by bootstrap topology connected to VCC. The device operating area as a function of the  
supply voltage is given in Figure 12.  
3.7  
LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23, 27)  
Low side and high side power outputs are specifically designed for pulse operation such as gate drive of IGBT  
and MOSFET devices. Low side outputs (i.e. LO1,2,3) are state triggered by the respective inputs, while high  
side outputs (i.e. HO1,2,3) are edge triggered by the respective inputs. In particular, after an under voltage  
condition of the VBS supply, a new turn-on signal (edge) is necessary to activate the respective high side  
output, while after a under voltage condition of the VCC supply, the low side outputs switch to the state of their  
respective inputs.  
datasheet  
9
<Revision 2.8>, 05.08.2016  

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