Datasheet > 6116SA35SOG

6116SA35SOG

更新时间： 2022-12-01 20:41:48

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器光电二极管
页数	文件大小	规格书
11页	611K
描述
Standard SRAM, 2KX8, 35ns, CMOS, PDSO24, 0.300 INCH, ROHS COMPLIANT, SOIC-24

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替代型号

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6116SA35SOG 数据手册

CMOS Static RAM

16K (2K x 8-Bit)

IDT6116SA

IDT6116LA

Features

Description

◆

High-speed access and chip select times

The IDT6116SA/LA is a 16,384-bit high-speed static RAM

organized as 2K x 8. It is fabricated using IDT's high-performance,

high-reliabilityCMOStechnology.

– Military:20/25/35/45/55/70/90/120/150ns(max.)

– Industrial:20/25/35/45ns(max.)

– Commercial:15/20/25/35/45ns(max.)

Low-power consumption

Battery backup operation

– 2V data retention voltage (LA version only)

Produced with advanced CMOS high-performance

technology

CMOS process virtually eliminates alpha particle soft-error consumesonly1µWto4µWoperatingoffa2Vbattery.

Access times as fastas 15ns are available. The circuitalsooffers a

reduced power standby mode. When CS goes HIGH, the circuit will

automatically go to, and remain in, a standby power mode, as long

as CS remains HIGH. This capability provides significant system level

power and cooling savings. The low-power (LA) version also offers a

battery backup data retention capability where the circuit typically

◆

rates

AllinputsandoutputsoftheIDT6116SA/LAareTTL-compatible.Fully

static asynchronous circuitry is used, requiring no clocks or refreshing

foroperation.

TheIDT6116SA/LAispackagedin24-pin600and300milplasticor

ceramicDIP,24-leadgull-wingSOIC,and24-leadJ-bendSOJproviding

highboard-levelpackingdensities.

◆

Input and output directly TTL-compatible

Static operation: no clocks or refresh required

Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,

24-pin SOIC and 24-pin SOJ

◆

Military product compliant to MIL-STD-833, Class B

Military grade product is manufactured in compliance to the latest

version of MIL-STD-883, Class B, making it ideally suited to military

temperatureapplicationsdemandingthehighestlevelofperformanceand

reliability.

FunctionalBlockDiagram

128 X 128

MEMORY

ARRAY

ADDRESS

DECODER

GND

A ₁₀

I/O

I/O CONTROL

INPUT

DATA

CIRCUIT

I/O₇

CONTROL

CIRCUIT

3089 drw 01

JANUARY 2009

DSC-3089/06

12 3 4 5 6 7...11

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6116SA35SOG 替代型号

型号	品牌	替代类型	描述	数据表
IDT6116LA35SOG8	IDT	完全替代	Standard SRAM, 2KX8, 35ns, CMOS, PDSO24, 0.300 INCH, SOIC-24

与6116SA35SOG相关器件

型号	品牌	描述	获取价格	数据表
6116SA35SOG8	IDT	Standard SRAM, 2KX8, 35ns, CMOS, PDSO24	获取价格
6116SA35SOGI8	IDT	Standard SRAM, 2KX8, 35ns, CMOS, PDSO24	获取价格
6116SA35SOI	IDT	Standard SRAM, 2KX8, 35ns, CMOS, PDSO24, 0.300 INCH, SOIC-24	获取价格
6116SA35SOI8	IDT	Standard SRAM, 2KX8, 35ns, CMOS, PDSO24, 0.300 INCH, SOIC-24	获取价格
6116SA35TD	IDT	Standard SRAM, 2KX8, 35ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24	获取价格
6116SA35TP	IDT	Standard SRAM, 2KX8, 35ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24	获取价格