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6116SA25SOGI8 PDF预览

6116SA25SOGI8

更新时间: 2024-02-01 23:35:59
品牌 Logo 应用领域
艾迪悌 - IDT PC静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 87K
描述
High-speed access and chip select times

6116SA25SOGI8 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP24,.4针数:24
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.24
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:5079326Samacsys Pin Count:24
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:PSG24Samacsys Released Date:2020-02-13 07:09:11
Is Samacsys:N最长访问时间:25 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G24
JESD-609代码:e3长度:15.4178 mm
内存密度:16384 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:24
字数:2048 words字数代码:2000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP24,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:2.6416 mm最大待机电流:0.002 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.12 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:7.5184 mmBase Number Matches:1

6116SA25SOGI8 数据手册

 浏览型号6116SA25SOGI8的Datasheet PDF文件第2页浏览型号6116SA25SOGI8的Datasheet PDF文件第3页浏览型号6116SA25SOGI8的Datasheet PDF文件第4页浏览型号6116SA25SOGI8的Datasheet PDF文件第5页浏览型号6116SA25SOGI8的Datasheet PDF文件第6页浏览型号6116SA25SOGI8的Datasheet PDF文件第7页 
CMOS Static RAM  
16K (2K x 8-Bit)  
IDT6116SA  
IDT6116LA  
Features  
Description  
High-speed access and chip select times  
TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganized  
as2Kx8.Itisfabricatedusinghigh-performance,high-reliabilityCMOS  
technology.  
– Military:20/25/35/45/55/70/90/120/150ns(max.)  
– Industrial:20/25ns(max.)  
– Commercial:15/20/25ns(max.)  
Low-power consumption  
Battery backup operation  
– 2V data retention voltage (LA version only)  
Produced with advanced CMOS high-performance  
technology  
CMOS process virtually eliminates alpha particle soft-error Woperatingoffa2Vbattery.  
Access times as fast as 15ns are available. The circuit also offers a  
reduced power standby mode. When CS goes HIGH, the circuit will  
automaticallygoto,andremainin,astandbypowermode,aslongasCS  
remainsHIGH.Thiscapabilityprovidessignificantsystemlevelpowerand  
coolingsavings. Thelow-power(LA)versionalsooffersabatterybackup  
dataretentioncapabilitywherethecircuittypicallyconsumesonly1µWto  
rates  
AllinputsandoutputsoftheIDT6116SA/LAareTTL-compatible.Fully  
staticasynchronouscircuitryisused,requiringnoclocksorrefreshingfor  
operation.  
TheIDT6116SA/LAispackagedin24-pin300milplasticDIP,24-pin  
600miland300milceramicDIP,or24-leadgull-wingSOICprovidinghigh  
board-levelpackingdensities.  
Input and output directly TTL-compatible  
Static operation: no clocks or refresh required  
Availableinceramic24-pinDIP,ceramicandplastic24-pinThin  
Dip and 24-pin SOIC  
Military product compliant to MIL-STD-833, Class B  
Militarygradeproductismanufacturedincomplianceto MIL-STD-883,  
Class B, making it ideally suited to military temperature applications  
demandingthehighestlevelofperformanceandreliability.  
FunctionalBlockDiagram  
A0  
CC  
V
128 X 128  
MEMORY  
ARRAY  
ADDRESS  
DECODER  
GND  
A10  
I/O0  
I/O CONTROL  
INPUT  
DATA  
CIRCUIT  
I/O7  
,
CS  
OE  
WE  
CONTROL  
CIRCUIT  
3089 drw 01  
FEBRUARY 2013  
1
©2013IntegratedDeviceTechnology,Inc.  
DSC-3089/08  

6116SA25SOGI8 替代型号

型号 品牌 替代类型 描述 数据表
6116LA25SOGI8 IDT

完全替代

High-speed access and chip select times

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