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6116LA45YGI PDF预览

6116LA45YGI

更新时间: 2023-01-15 00:00:00
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管
页数 文件大小 规格书
11页 611K
描述
Standard SRAM, 2KX8, 45ns, CMOS, PDSO24, 0.300 INCH, ROHS COMPLIANT, SOJ-24

6116LA45YGI 数据手册

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IDT6116SA/LA  
CMOS Static RAM 2K (16K x 8-Bit)  
Military, Commercial, and Industrial Temperature Ranges  
Timing Waveform of Read Cycle No. 1(1,3)  
t
RC  
ADDRESS  
tAA  
tOH  
OE  
CS  
(5)  
t
OE  
tOHZ  
(5)  
tOLZ  
(5)  
t
ACS  
(5)  
t
CHZ  
t
CLZ  
DATA  
VALID  
DATAOUT  
t
PU  
ICC  
V
CC  
Supply  
Currents  
ISB  
t
PD  
,
3089 drw 06  
Timing Waveform of Read Cycle No. 2(1,2,4)  
tRC  
ADDRESS  
tAA  
tOH  
tOH  
DATA VALID  
DATAOUT  
PREVIOUS DATA VALID  
,
3089 drw 07  
Timing Waveform of Read Cycle No. 3(1,3,4)  
CS  
(5)  
tACS  
t
CHZ  
(5)  
tCLZ  
,
DATAOUT  
DATA VALID  
3089 drw 08  
NOTES:  
1. WE is HIGH for Read cycle.  
2. Device is continously selected, CS is LOW.  
3. Address valid prior to or coincident with CS transition LOW.  
4. OE is LOW.  
5. Transition is measured ±500mV from steady state.  
6.42  
7

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