ITAVM
ITRMS
ITSM
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Phase Control Thyristor
5STP 45N2800
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0.07
mΩ
Doc. No. 5SYA1007-03 Jan. 02
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol
Conditions
5STP 45N2800 5STP 45N2600 5STP 45N2200
VDRM, VRRM f = 50 Hz, tp = 10ms
2800 V
2600 V
2200 V
VRSM1
tp = 5ms, single pulse
3000 V
2800 V
2400 V
dV/dtcrit
Exp. to 0.67 x VDRM, Tj = 125°C
1000 V/µs
Characteristic values
Parameter
Forwarde leakage current
Reverse leakage current
Symbol Conditions
IDRM VDRM, Tj = 125°C
IRRM VRRM, Tj = 125°C
min
typ
max
400
400
Unit
mA
mA
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
FM
min
min
typ
max
108
50
100
Unit
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
81
90
kN
a
a
Device unclamped
Device clamped
m/s2
m/s2
Symbol Conditions
m
typ
2.9
max
Unit
Weight
kg
Surface creepage distance
Air strike distance
DS
Da
56
22
mm
mm
1) Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.