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5STP45N2200 PDF预览

5STP45N2200

更新时间: 2022-04-23 23:00:11
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ABB /
页数 文件大小 规格书
6页 314K
描述
Phase Control Thyristor

5STP45N2200 数据手册

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V
DSM  
ITAVM  
ITRMS  
ITSM  
V
T0  
=
=
=
2800 V  
5080 A  
7970 A  
Phase Control Thyristor  
= 75000 
A  
5STP 45N2800  
=
=
0.86 V  
0.07  
r
T  
mΩ  
Doc. No. 5SYA1007-03 Jan. 02  
Patented free-floating silicon technology  
Low on-state and switching losses  
Designed for traction, energy and industrial applications  
Optimum power handling capability  
Interdigitated amplifying gate  
Blocking  
Maximum rated values 1)  
Symbol  
Conditions  
5STP 45N2800 5STP 45N2600 5STP 45N2200  
VDRM, VRRM f = 50 Hz, tp = 10ms  
2800 V  
2600 V  
2200 V  
VRSM1  
tp = 5ms, single pulse  
3000 V  
2800 V  
2400 V  
dV/dtcrit  
Exp. to 0.67 x VDRM, Tj = 125°C  
1000 V/µs  
Characteristic values  
Parameter  
Forwarde leakage current  
Reverse leakage current  
Symbol Conditions  
IDRM VDRM, Tj = 125°C  
IRRM VRRM, Tj = 125°C  
min  
typ  
max  
400  
400  
Unit  
mA  
mA  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
FM  
min  
min  
typ  
max  
108  
50  
100  
Unit  
Mounting force  
Acceleration  
Acceleration  
Characteristic values  
Parameter  
81  
90  
kN  
a
a
Device unclamped  
Device clamped  
m/s2  
m/s2  
Symbol Conditions  
m
typ  
2.9  
max  
Unit  
Weight  
kg  
Surface creepage distance  
Air strike distance  
DS  
Da  
56  
22  
mm  
mm  
1) Maximum Ratings are those values beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  

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