Datasheet > 5STP18M5800

5STP18M5800

更新时间： 2024-09-28 03:04:35

品牌	Logo	应用领域
ABB		/
页数	文件大小	规格书
6页	238K
描述
Phase Control Thyristor

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中文翻译

获取价格

数据手册

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5STP18M5800 数据手册

_DSM

I_TAVM

I_TRMS

I_TSM

_T0

6500 V

1800 A

2820 A

Phase Control Thyristor

= 32000

5STP 18M6500

1.2 V

0.43

mΩ

Doc. No. 5SYA1010-03 Jan. 02

• Patented free-floating silicon technology

• Low on-state and switching losses

• Designed for traction, energy and industrial applications

• Optimum power handling capability

• Interdigitated amplifying gate

Blocking

Maximum rated values ¹⁾

Symbol

Conditions

5STP 18M6500 5STP 18M6200 5STP 18M5800

V_DSM,V_RSMf = 5 Hz, t_p= 10ms

V_DRM,V_RRMf = 50 Hz, t_p= 10ms

6500 V

5600 V

7000 V

6200 V

5300 V

6700 V

5800 V

4900 V

6300 V

V_RSM1

t_p= 5ms, single pulse

dV/dt_crit

Exp. to 0.67 x V_DRM, T_j= 125°C

2000 V/µs

Characteristic values

Parameter

Forwarde leakage current

Reverse leakage current

Symbol Conditions

I_DSMV_DSM, T_j= 125°C

I_RSMV_RSM, T_j= 125°C

min

typ

max

600

Unit

V_DRM/ V_RRMare equal to V_DSM/ V_RSMvalues up to T_j= 110°C

Mechanical data

Maximum rated values ¹⁾

Parameter

Symbol Conditions

F_M

min

typ

max

Unit

Mounting force

Acceleration

Characteristic values

Parameter

100

Device unclamped

Device clamped

m/s²

Symbol Conditions

typ

1.85

max

Unit

Weight

Surface creepage distance

Air strike distance

D_S

D_a

¹⁾Maximum Ratings are those values beyond which damage to the device may occur

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

12 3 4 5 6

中文翻译

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