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5SDF10H4502 PDF预览

5SDF10H4502

更新时间: 2024-01-20 00:03:41
品牌 Logo 应用领域
ABB 二极管快恢复二极管快速恢复二极管
页数 文件大小 规格书
6页 112K
描述
Fast Recovery Diode

5SDF10H4502 技术参数

生命周期:Active包装说明:H, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76Is Samacsys:N
应用:FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):4.85 VJESD-30 代码:O-CEDB-N2
最大非重复峰值正向电流:40000 A元件数量:1
相数:1端子数量:2
最高工作温度:115 °C最低工作温度:-40 °C
最大输出电流:810 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大重复峰值反向电压:4500 V
子类别:Rectifier Diodes表面贴装:YES
端子形式:NO LEAD端子位置:END
Base Number Matches:1

5SDF10H4502 数据手册

 浏览型号5SDF10H4502的Datasheet PDF文件第1页浏览型号5SDF10H4502的Datasheet PDF文件第3页浏览型号5SDF10H4502的Datasheet PDF文件第4页浏览型号5SDF10H4502的Datasheet PDF文件第5页浏览型号5SDF10H4502的Datasheet PDF文件第6页 
5SDF 10H4502  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
IF(AV)M Half sine wave, TC = 70 °C  
min  
typ  
max  
810  
Unit  
Max. average on-state  
current  
A
Max. RMS on-state current IF(RMS)  
1270  
24×103  
A
A
Max. peak non-repetitive  
surge current  
IFSM  
tp = 10 ms, Tvj = 115°C, VR = 0 V  
tp = 1 ms, Tvj = 115°C, VR = 0 V  
Limiting load integral  
I2t  
2.88×106 A2s  
40×103  
Max. peak non-repetitive  
surge current  
IFSM  
A
Limiting load integral  
Characteristic values  
Parameter  
I2t  
800×103 A2s  
Symbol Conditions  
min  
min  
typ  
typ  
max  
4.85  
2.42  
1.1  
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
VF  
IF = 2200 A, Tvj = 115°C  
V(T0)  
rT  
Tvj = 115°C  
IF = 400...3000 A  
V
mW  
Turn-on  
Characteristic values  
Parameter  
Symbol Conditions  
max  
Unit  
Peak forward recovery  
voltage  
VFRM  
dIF/dt = 1000 A/µs, Tvj = 115°C  
370  
V
Turn-off  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
typ  
max  
Unit  
Max. decay rate of on-state di/dtcrit  
current  
Characteristic values  
IFM = 2200 A, Tvj = 115 °C  
VDC-link = 2800 V  
650  
A/ms  
Parameter  
Symbol Conditions  
max  
1150  
2200  
4.5  
Unit  
A
Reverse recovery current  
Reverse recovery charge  
Turn-off energy  
IRM  
Qrr  
Err  
IFQ = 2200 A, VDC-Link = 2700 V  
di/dt = 650 A/µs, LCL = 300 nH  
µC  
J
CCL = 10 µF, RCL = 0.65 W, Tj =  
115°C  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1115-03 Oct. 06  
page 2 of 6  

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