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5KP43AB

更新时间： 2024-11-18 17:53:35
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
6页 890K
描述
Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon

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中文翻译

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5KP43AB 技术参数

是否无铅： 含铅生命周期：Transferred
包装说明：O-PALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.49
其他特性：UL RECOGNIZED最大击穿电压：52.8 V
最小击穿电压：47.8 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
最大非重复峰值反向功率耗散：5000 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
极性：UNIDIRECTIONAL最大功率耗散：8 W
认证状态：Not Qualified表面贴装：NO
技术：AVALANCHE端子形式：WIRE
端子位置：AXIALBase Number Matches：1

5KP43AB 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 5000W > 5KP series  
RoHS  
5KP Series  
Description  
Uni-directional  
The 5KP Series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by  
lightning and other transient voltage events.  
Features  
Bi-directional  
• VBR @TJ= VBR@25°C × (1+αT • ESD protection of data  
lines in accordance with  
IEC 61000-4-2 (IEC801-2)  
x (TJ - 25))  
(αT:Temperature Coefficient)  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4 (IEC801-4)  
• Low incremental surge  
resistance  
• Glass passivated chip  
junction in P600 package  
Agency Approvals  
• 5000W peak pulse  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
AGENCY  
AGENCY FILE NUMBER  
E128662/E230531  
• Typical IR less than 2μA  
above 12V  
• High temperature  
soldering guaranteed:  
260°C/40 seconds /  
0.375”, (9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
• Plastic package has  
underwriters laboratory  
flammability classification  
94V-O  
Maximum Ratings andThermal Characteristics  
(TA=25°C unless otherwise noted)  
• Excellent clamping  
capability  
•Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
Parameter  
Symbol  
PPPM  
Value  
5000  
Unit  
W
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
Steady State Power Dissipation on  
Inifinite Heat Sink atTL=75ºC (Fig. 6)  
PD  
8.0  
W
A
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only (Note 3)  
IFSM  
400  
15kV(Air), 8kV (Contact)  
VF  
3.5/5.0  
V
Applications  
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 150  
°C  
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
V
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
8.0  
40  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTA = 25°C per Fig. 3.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
3. VF<3.5V for devices of VBR<_ 200V and VF<5.0V for devices of VBR>_ 201V.  
Additional Information  
Functional Diagram  
Datasheet  
Resources  
Samples  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2014 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 01/24/14  
123456

中文翻译

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