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5KP160T

更新时间： 2024-11-14 12:59:59
品牌 Logo 应用领域
力特 - LITTELFUSE 瞬态抑制器二极管
页数 文件大小 规格书
5页 139K
描述
Trans Voltage Suppressor Diode, 5000W, 160V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE P600, 2 PIN

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5KP160T 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：O-PALF-W2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.65其他特性：UL RECOGNIZED
最大击穿电压：196.9 V最小击穿电压：177.9 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：2最大非重复峰值反向功率耗散：5000 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：8 W
认证状态：Not Qualified最大重复峰值反向电压：160 V
表面贴装：NO技术：AVALANCHE
端子面层：Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

5KP160T 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 5000W > 5KP series  
RoHS  
5KP Series  
Description  
The 5KP Series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by  
lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 5ZQJDBMꢀ*R less than 2μA  
above 12V  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT tꢀ )JHIꢀUFNQFSBUVSFꢀ  
soldering guaranteed:  
Agency Approvals  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
260°C/40 seconds / 0.375”,  
(9.5mm) lead length, 5  
lbs., (2.3kg) tension  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability classification  
94V-O  
junction in P600 package  
AGENCY  
AGENCY FILE NUMBER  
E128662/E230531  
tꢀ ꢂꢃꢃꢃ8ꢀQFBLꢀQVMTFꢀ  
capability at 10×1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0 Volts to BV min  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀQMBUFE  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
Parameter  
Symbol  
PPPM  
Value  
5000  
Unit  
W
Peak Pulse Power Dissipation by  
10x1000μs test waveform (Fig.1)  
(Note 1)  
Applications  
Steady State Power Dissipation on  
inifinite heat sink atTL=75ºC (Fig. 5)  
PD  
8.0  
W
A
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
V
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
only (Note 2)  
IFSM  
400  
computer, industrial and consumer electronic applications.  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
only (Note 3)  
VF  
3.5/5.0  
V
Operating Junction and Storage  
Temperature Range  
T , TSTG -55 to 175  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
8.0  
40  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
3. VF<3.5V for devices of VBR <_ 200V and VF<5.0V for devices of VBR >_ 201V.  
©2009 Littelfuse, Inc.  
105  
Revision: January 09, 2009  
5KP Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/5KP.html for current information.  
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