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5KP15CA-G PDF预览

5KP15CA-G

更新时间: 2024-11-18 13:04:47
品牌 Logo 应用领域
上华 - COMCHIP 瞬态抑制器二极管局域网
页数 文件大小 规格书
5页 100K
描述
Trans Voltage Suppressor Diode, 15V V(RWM), Bidirectional,

5KP15CA-G 技术参数

是否Rohs认证:符合生命周期:End Of Life
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.77
Is Samacsys:N击穿电压标称值:17.6 V
最大钳位电压:24.4 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大重复峰值反向电压:15 V子类别:Transient Suppressors
表面贴装:NO处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

5KP15CA-G 数据手册

 浏览型号5KP15CA-G的Datasheet PDF文件第2页浏览型号5KP15CA-G的Datasheet PDF文件第3页浏览型号5KP15CA-G的Datasheet PDF文件第4页浏览型号5KP15CA-G的Datasheet PDF文件第5页 
5000W Transient Voltage Suppressor  
5KP-G Series  
Stand-off Voltage: 6.8V ~ 220V  
Power Dissipation: 5000 Watts  
RoHS Device  
R-6  
Features  
-Glass passivated chip.  
0.052(1.32)  
0.048(1.22)  
DIA.  
-Low leakage.  
1.0(25.4)  
MIN.  
-Uni and Bidirection unit.  
-Excellent clamping capability.  
-The plastic material has UL recognition 94V-0.  
-Fast response time.  
0.360(9.14)  
0.340(8.64)  
Mechanical Data  
0.360(9.14)  
0.340(8.64)  
DIA.  
-Case: Molded plastic R-6  
-Polarity: By cathode band denotes uni-directional  
device, none cathode band denotes bi-directional  
device  
1.0(25.4)  
MIN.  
-Weight: 2.1 grams  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derated current by 20%.  
Symbol  
Parameter  
Value  
Unit  
Peak power dissipation with a 10/1000μs  
waveform (Note 1)  
PPP  
W
5000  
Peak pulse current with a 10/1000μs waveform  
IPP  
PD  
W
W
A
See Next Table  
(Note 1)  
Power dissipation on infinite heatsink at TL=75°C  
8.0  
Peak forward surge current, 8.3ms single  
half sine-wave unidirectional only (Note 2)  
IFSM  
500  
Maximum instantaneous forward voltage at  
100A for uni-directional devices only (Note 3)  
3.5 / 5.0  
VF  
V
Operating junction and storage temperature  
range  
OC  
TJ, TSTG  
-55 to +150  
NTOES:  
(1) Non-repetitive current pulse, per fig.5 and derated above TA=25 OC per fig. 1.  
(2) Measured on 8.3 ms single half sine wave of equivalent square wave,duty cycle=4 pulses per minute maximum.  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
REV:B  
Page 1  
QW-BTV08  

5KP15CA-G 替代型号

型号 品牌 替代类型 描述 数据表
A5KP15CA-G COMCHIP

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