5秒后页面跳转
5962R9662101TXC PDF预览

5962R9662101TXC

更新时间: 2024-01-18 20:32:57
品牌 Logo 应用领域
英特矽尔 - INTERSIL 逻辑集成电路
页数 文件大小 规格书
3页 33K
描述
CMOS Quad 2-Input NAND Gate

5962R9662101TXC 技术参数

生命周期:Obsolete零件包装代码:DFP
包装说明:DFP,针数:14
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.05Is Samacsys:N
系列:4000/14000/40000JESD-30 代码:R-CDFP-F14
JESD-609代码:e4逻辑集成电路类型:NAND GATE
功能数量:4输入次数:2
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK传播延迟(tpd):338 ns
认证状态:Not Qualified筛选级别:MIL-PRF-38535 Class V
最大供电电压 (Vsup):18 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:GOLD端子形式:FLAT
端子位置:DUAL总剂量:100k Rad(Si) V
Base Number Matches:1

5962R9662101TXC 数据手册

 浏览型号5962R9662101TXC的Datasheet PDF文件第2页浏览型号5962R9662101TXC的Datasheet PDF文件第3页 
CD4011BT  
Data Sheet  
July 1999  
File Number 4620.1  
CMOS Quad 2-Input NAND Gate  
Features  
Intersil’s Satellite Applications FlowTM (SAF) devices are fully  
tested and guaranteed to 100kRAD total dose. These QML  
Class T devices are processed to a standard flow intended  
to meet the cost and shorter lead-time needs of large  
volume satellite manufacturers, while maintaining a high  
level of reliability.  
• QML Class T, Per MIL-PRF-38535  
• Radiation Performance  
5
- Gamma Dose (γ) 1 x 10 RAD(Si)  
2
- SEP Effective LET > 75 MEV/gm/cm  
• Propagation Delay Time = 60ns (typ.) at CL = 50pF,  
= 10V  
V
DD  
The CD4011BT, Quad 2-Input NAND gate provides the  
system designer with direct implementation of the NAND  
function and supplements the existing family of CMOS  
gates. All inputs and outputs are buffered.  
• Buffered Inputs and Outputs  
• Standardized Symmetrical Output Characteristics  
• 100% Tested for Maximum Quiescent Current at 20V  
• 5V, 10V and 15V Parametric Ratings  
Specifications  
Specifications for Rad Hard QML devices are controlled by  
the Defense Supply Center in Columbus (DSCC). The SMD  
numbers listed below must be used when ordering.  
Pinouts  
CD4011BT (SBDIP), CDIP2-T14  
TOP VIEW  
Detailed Electrical Specifications for the CD4011BT are  
contained in SMD 5962-96621. A “hot-link” is provided from  
our website for downloading.  
A
B
1
2
3
4
5
6
7
14  
13  
12  
V
DD  
H
G
www.intersil.com/quality/manuals.asp  
J = AB  
K = CD  
C
Intersil’s Quality Management Plan (QM Plan), listing all  
Class T screening operations, is also available on our  
website.  
11 M = GH  
10 L = EF  
www.intersil.com/quality/manuals.asp  
D
9
8
E
F
V
SS  
Ordering Information  
TEMP.  
ORDERING  
NUMBER  
PART  
NUMBER  
RANGE  
( C)  
o
CD4011BT (FLATPACK), CDFP3-F14  
TOP VIEW  
5962R9662101TCC  
5962R9662101TXC  
CD4011BDTR  
CD4011BKTR  
-55 to 125  
-55 to 125  
A
B
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V
DD  
H
J = AB  
K = CD  
C
G
NOTE: Minimum order quantity for -T is 150 units through  
distribution, or 450 units direct.  
M = GH  
L = EF  
D
E
F
V
8
SS  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1

5962R9662101TXC 替代型号

型号 品牌 替代类型 描述 数据表
89265AKB3T TI

功能相似

CMOS NAND GATES
89273AKB3T TI

功能相似

CMOS NAND GATES

与5962R9662101TXC相关器件

型号 品牌 获取价格 描述 数据表
5962R9662101VCC ETC

获取价格

Quad 2-input NAND Gate
5962R9662101VXC ETC

获取价格

Quad 2-input NAND Gate
5962R9662102VCC ETC

获取价格

Dual 4-input NAND Gate
5962R9662102VXC ETC

获取价格

Dual 4-input NAND Gate
5962R9662103VCC ETC

获取价格

Triple 3-input NAND Gate
5962R9662103VXC ETC

获取价格

Triple 3-input NAND Gate
5962R9662104VCC ETC

获取价格

Quad 2-input NAND Gate
5962R9662104VXC ETC

获取价格

Quad 2-input NAND Gate
5962R9662104VXX WEDC

获取价格

IC 4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, CDFP14, CERAMIC, DFP-14, Gate
5962R9662105VCC ETC

获取价格

Dual 4-input NAND Gate