Datasheet > 5962R9581901VQC

5962R9581901VQC

更新时间： 2024-01-17 13:37:01

品牌	Logo	应用领域
英特矽尔 - INTERSIL		外围集成电路
页数	文件大小	规格书
17页	234K
描述
Radiation Hardened CMOS Programmable Peripheral Interface

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技术参数
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5962R9581901VQC 技术参数

生命周期：	Obsolete	零件包装代码：	DIP
包装说明：	DIP,	针数：	40
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.19
JESD-30 代码：	R-CDIP-T40	JESD-609代码：	e4
I/O 线路数量：	24	端口数量：	3
端子数量：	40	最高工作温度：	125 °C
最低工作温度：	-55 °C	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装代码：	DIP	封装形状：	RECTANGULAR
封装形式：	IN-LINE	认证状态：	Not Qualified
筛选级别：	MIL-PRF-38535 Class V	座面最大高度：	5.72 mm
最大供电电压：	5.5 V	最小供电电压：	4.5 V
标称供电电压：	5 V	表面贴装：	NO
技术：	CMOS	温度等级：	MILITARY
端子面层：	GOLD	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
总剂量：	100k Rad(Si) V	宽度：	15.24 mm
uPs/uCs/外围集成电路类型：	PARALLEL IO PORT, GENERAL PURPOSE	Base Number Matches：	1

5962R9581901VQC 数据手册

HS-82C55ARH

Data Sheet

August 2000

File Number 3191.2

Radiation Hardened CMOS Programmable

Peripheral Interface

Features

• Electrically Screened to SMD # 5962-95819

• QML Qualiﬁed per MIL-PRF-38535 Requirements

• Radiation Hardened

The Intersil HS-82C55ARH is a high performance, radiation

hardened CMOS version of the industry standard 8255A and

is manufactured using a hardened ﬁeld, self-aligned silicon

gate CMOS process. It is a general purpose programmable

I/O device which may be used with many different

- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)

- Transient Upset. . . . . . . . . . . . . . . . . . . . <10 rad(Si)/s

- Latch Up Free EPI-CMOS

microprocessors. There are 24 I/O pins which are organized

into two 8-bit and two 4-bit ports. Each port may be

• Low Power Consumption

- IDDSB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20µA

• Pin Compatible with NMOS 8255A and the Intersil 82C55A

programmed to function as either an input or an output.

Additionally, one of the 8-bit ports may be programmed for

bidirectional operation, and the two 4-bit ports can be

programmed to provide handshaking capabilities. The high

performance, radiation hardness, and industry standard

conﬁguration of the HS-82C55ARH make it compatible with

the HS-80C86RH radiation hardened microprocessor.

• High Speed, No “Wait State” Operation with 5MHz

HS-80C86RH

• 24 Programmable I/O Pins

• Bus-Hold Circuitry on All I/O Ports Eliminates Pull-Up

Resistors

• Direct Bit Set/Reset Capability

Static CMOS circuit design insures low operating power. Bus

hold circuitry eliminates the need for pull-up resistors. The

Intersil hardened ﬁeld CMOS process results in performance

equal to or greater than existing radiation resistant products

at a fraction of the power.

• Enhanced Control Word Read Capability

• Hardened Field, Self-Aligned, Junction Isolated CMOS

Process

• Single 5V Supply

Speciﬁcations for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

• 2.0mA Drive Capability on All I/O Port Outputs

• Military Temperature Range . . . . . . . . . . . -55 C to 125 C

Pinout

Detailed Electrical Speciﬁcations for these devices are

contained in SMD 5962-95819. A “hot-link” is provided

on our homepage for downloading.

CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T40

TOP VIEW

www.intersil.com/spacedefense/space.asp

PA3

PA2

PA1

PA0

40 PA4

39 PA5

38 PA6

37 PA7

36 WR

35 RESET

34 D0

Ordering Information

INTERNAL

TEMP. RANGE

ORDERING NUMBER

5962R9581901QQC

5962R9581901VQC

MKT. NUMBER

( C)

HS1-82C55ARH-8

HS1-82C55ARH-Q

-55 to 125

GND

33 D1

32 D2

PC7 10

PC6 11

PC5 12

PC4 13

PC0 14

PC1 15

PC2 16

PC3 17

PB0 18

PB1 19

PB2 20

31 D3

30 D4

29 D5

28 D6

27 D7

26 VDD

25 PB7

24 PB6

23 PB5

22 PB4

21 PB3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5 6 7...17

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5962R9581901VQC 替代型号

型号	品牌	替代类型	描述	数据表
5962R9581901VQC	INTERSIL	当前型号	Radiation Hardened CMOS Programmable Peripheral Interface
M5L8255AP-5	MITSUBISHI	功能相似	PROGRAMMABLE PERIPHERAL INTERFACE

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