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5962R9570801QJX PDF预览

5962R9570801QJX

更新时间: 2024-02-18 04:29:45
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器OTP只读存储器内存集成电路
页数 文件大小 规格书
5页 137K
描述
2KX8 OTPROM, 120ns, CDIP24

5962R9570801QJX 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:24
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.69
Is Samacsys:N最长访问时间:100 ns
JESD-30 代码:R-CDIP-T24内存密度:16384 bit
内存集成电路类型:OTP ROM内存宽度:8
功能数量:1端子数量:24
字数:2048 words字数代码:2000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:2KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL认证状态:Not Qualified
筛选级别:MIL-PRF-38535 Class Q座面最大高度:5.72 mm
表面贴装:NO技术:CMOS
温度等级:MILITARY端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
总剂量:100k Rad(Si) V宽度:15.24 mm
Base Number Matches:1

5962R9570801QJX 数据手册

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HS-6617RH  
TM  
Data Sheet  
August 2000  
File Number 3033.4  
Radiation Hardened 2K x 8 CMOS PROM  
Features  
The Intersil HS-6617RH is a radiation hardened 16K CMOS  
PROM, organized in a 2K word by 8-bit format. The chip is  
manufactured using a radiation hardened CMOS process,  
and is designed to be functionally equivalent to the  
HM-6617. Synchronous circuit design techniques combine  
with CMOS processing to give this device high speed  
performance with very low power dissipation.  
• Electrically Screened to SMD # 5962-95708  
• QML Qualified per MIL-PRF-38535 Requirements  
Total Dose . . . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)  
12  
• Latch-Up Free. . . . . . . . . . . . . . . . . . . .>1 x 10 rad(Si)/s  
• Field Programmable  
• Functionally Equivalent to HM-6617  
• Pin Compatible with Intel 2716  
On chip address latches are provided, allowing easy  
interfacing with recent generation microprocessors that use  
multiplexed address/data bus structure, such as the  
HS-80C85RH or HS-80C86RH. The output enable control  
(G) simplifies microprocessor system interfacing by allowing  
output data bus control, in addition to, the chip enable  
control. Synchronous operation of the HS-6617RH is ideal  
for high speed pipe-lined architecture systems and also in  
synchronous logic replacement functions.  
• Low Standby Power . . . . . . . . . . . . . . . . . . . 1.1mW (Max)  
• Low Operating Power . . . . . . . . . . . .137.5mW/MHz (Max)  
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . .100ns (Max)  
• TTL Compatible Inputs/Outputs  
• Synchronous Operation  
Applications for the HS-6617RH CMOS PROM include low  
power microprocessor based instrumentation and  
communications systems, remote data acquisition and  
processing systems, processor control store, and  
synchronous logic replacement.  
• On Chip Address Latches  
• Three-State Outputs  
• Nicrome Fuse Links  
• Easy Microprocessor Interfacing  
o
o
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
• Military Temperature Range . . . . . . . . . . . -55 C to 125 C  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-95708. A “hot-link” is provided  
on our homepage for downloading.  
http://www.intersil.com/spacedefense/space.htm  
Ordering Information  
INTERNAL  
MKT. NUMBER  
TEMP. RANGE  
o
ORDERING NUMBER  
5962R9570801QJC  
5962R9570801QXC  
5962R9570801VJC  
5962R9570801VXC  
HS1-6617RH/PROTO  
HS9-6617RH/PROTO  
( C)  
HS1-6617RH-8  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
HS9-6617RH-Q  
HS1-6617RH-Q  
HS9-6617RH-Q  
HS1-6617RH/PROTO  
HS9-6617RH/PROTO  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
1

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