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5962R9570801VXC

更新时间： 2024-02-19 07:24:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL 可编程只读存储器
页数 文件大小 规格书
5页 140K
描述
Radiation Hardened 2K x 8 CMOS PROM

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5962R9570801VXC 技术参数

生命周期：Obsolete零件包装代码：DFP
包装说明：DFP, FL24,.4针数：24
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.71风险等级：5.69
Is Samacsys：N最长访问时间：100 ns
JESD-30 代码：R-CDFP-F24JESD-609代码：e4
内存密度：16384 bit内存集成电路类型：OTP ROM
内存宽度：8功能数量：1
端子数量：24字数：2048 words
字数代码：2000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-55 °C
组织：2KX8封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：DFP封装等效代码：FL24,.4
封装形状：RECTANGULAR封装形式：FLATPACK
并行/串行：PARALLEL电源：5 V
认证状态：Not Qualified筛选级别：MIL-PRF-38535 Class V
座面最大高度：2.92 mm最大待机电流：0.0002 A
子类别：OTP ROMs最大压摆率：0.025 mA
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：MILITARY
端子面层：GOLD端子形式：FLAT
端子节距：1.27 mm端子位置：DUAL
总剂量：100k Rad(Si) V宽度：9.905 mm
Base Number Matches：1

5962R9570801VXC 数据手册

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HS-6617RH  
TM  
Data Sheet  
August 2000  
File Number 3033.4  
Radiation Hardened 2K x 8 CMOS PROM  
Features  
The Intersil HS-6617RH is a radiation hardened 16K CMOS  
PROM, organized in a 2K word by 8-bit format. The chip is  
manufactured using a radiation hardened CMOS process,  
and is designed to be functionally equivalent to the  
HM-6617. Synchronous circuit design techniques combine  
with CMOS processing to give this device high speed  
performance with very low power dissipation.  
• Electrically Screened to SMD # 5962-95708  
• QML Qualified per MIL-PRF-38535 Requirements  
• Total Dose . . . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)  
12  
• Latch-Up Free. . . . . . . . . . . . . . . . . . . .>1 x 10 rad(Si)/s  
• Field Programmable  
• Functionally Equivalent to HM-6617  
• Pin Compatible with Intel 2716  
On chip address latches are provided, allowing easy  
interfacing with recent generation microprocessors that use  
multiplexed address/data bus structure, such as the  
HS-80C85RH or HS-80C86RH. The output enable control  
(G) simplifies microprocessor system interfacing by allowing  
output data bus control, in addition to, the chip enable  
control. Synchronous operation of the HS-6617RH is ideal  
for high speed pipe-lined architecture systems and also in  
synchronous logic replacement functions.  
• Low Standby Power . . . . . . . . . . . . . . . . . . . 1.1mW (Max)  
• Low Operating Power . . . . . . . . . . . .137.5mW/MHz (Max)  
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . .100ns (Max)  
• TTL Compatible Inputs/Outputs  
• Synchronous Operation  
Applications for the HS-6617RH CMOS PROM include low  
power microprocessor based instrumentation and  
communications systems, remote data acquisition and  
processing systems, processor control store, and  
synchronous logic replacement.  
• On Chip Address Latches  
• Three-State Outputs  
• Nicrome Fuse Links  
• Easy Microprocessor Interfacing  
o
o
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
• Military Temperature Range . . . . . . . . . . . -55 C to 125 C  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-95708. A “hot-link” is provided  
on our homepage for downloading.  
http://www.intersil.com/spacedefense/space.htm  
Ordering Information  
INTERNAL  
MKT. NUMBER  
TEMP. RANGE  
o
ORDERING NUMBER  
5962R9570801QJC  
5962R9570801QXC  
5962R9570801VJC  
5962R9570801VXC  
HS1-6617RH/PROTO  
HS9-6617RH/PROTO  
( C)  
HS1-6617RH-8  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
HS9-6617RH-Q  
HS1-6617RH-Q  
HS9-6617RH-Q  
HS1-6617RH/PROTO  
HS9-6617RH/PROTO  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
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