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5962R0724903QXC PDF预览

5962R0724903QXC

更新时间： 2024-02-17 13:21:24
品牌 Logo 应用领域
英特矽尔 - INTERSIL 开关控制器
页数 文件大小 规格书
11页 648K
描述
Radiation Hardened, High Performance IndustryStandard Single-Ended Current Mode PWM Controller

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5962R0724903QXC 技术参数

是否Rohs认证：符合生命周期：Transferred
零件包装代码：DFP包装说明：DFP, FL8,.25
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.18Is Samacsys：N
模拟集成电路 - 其他类型：SWITCHING CONTROLLER控制模式：CURRENT-MODE
控制技术：PULSE WIDTH MODULATION最大输入电压：13.2 V
最小输入电压：9 VJESD-30 代码：R-CDFP-F8
JESD-609代码：e4长度：6.485 mm
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-55 °C
最大输出电流：1 A封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：DFP封装等效代码：FL8,.25
封装形状：RECTANGULAR封装形式：FLATPACK
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
筛选级别：MIL-PRF-38535 Class V座面最大高度：2.92 mm
子类别：Switching Regulator or Controllers表面贴装：YES
切换器配置：SINGLE最大切换频率：1000 kHz
温度等级：MILITARY端子面层：Gold (Au)
端子形式：FLAT端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
总剂量：100k Rad(Si) V宽度：6.475 mm
Base Number Matches：1

5962R0724903QXC 数据手册

 浏览型号5962R0724903QXC的Datasheet PDF文件第3页浏览型号5962R0724903QXC的Datasheet PDF文件第4页浏览型号5962R0724903QXC的Datasheet PDF文件第5页浏览型号5962R0724903QXC的Datasheet PDF文件第7页浏览型号5962R0724903QXC的Datasheet PDF文件第8页浏览型号5962R0724903QXC的Datasheet PDF文件第9页 
ISL78840ASRH, ISL78841ASRH, ISL78843ASRH, ISL78845ASRH  
Typical Performance Curves  
1.01  
1.001  
1.000  
0.999  
0.998  
0.997  
0.996  
0.995  
1.00  
0.99  
0.98  
-60 -40 -20  
0
20 40 60 80 100 120 140  
-60 -40 -20  
0
20 40 60 80 100 120 140  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
FIGURE 2. REFERENCE VOLTAGE vs TEMPERATURE  
FIGURE 1. FREQUENCY vs TEMPERATURE  
3
10  
1.001  
1.000  
0.998  
0.997  
0.996  
100pF  
100  
220pF  
330pF  
470pF  
1.0nF  
10  
2.2nF  
3.3nF  
4.7nF  
6.8nF  
1
1
10  
100  
-60 -40 -20  
0
20 40 60 80 100 120 140  
RT (kΩ)  
TEMPERATURE (°C)  
FIGURE 4. RESISTANCE FOR CT CAPACITOR VALUES  
GIVEN  
FIGURE 3. EA REFERENCE vs TEMPERATURE  
COMP - COMP is the output of the error amplifier and  
the input of the PWM comparator. The control loop  
frequency compensation network is connected between  
the COMP and FB pins.  
Pin Descriptions  
RTCT - This is the oscillator timing control pin. The  
operational frequency and maximum duty cycle are set  
by connecting a resistor, RT, between V  
and this pin  
REF  
and a timing capacitor, CT, from this pin to GND. The  
oscillator produces a sawtooth waveform with a  
programmable frequency range up to 2.0MHz. The  
FB - The output voltage feedback is connected to the  
inverting input of the error amplifier through this pin. The  
non-inverting input of the error amplifier is internally tied  
to a reference voltage.  
charge time, t , the discharge time, t , the switching  
C
D
frequency, f, and the maximum duty cycle, D  
, can be  
(EQ. 1)  
(EQ. 2)  
MAX  
CS - This is the current sense input to the PWM  
comparator. The range of the input signal is nominally 0V  
to 1.0V and has an internal offset of 100mV.  
approximated from the Equations 1 through 4:  
t
≈ 0.533 ⋅ RT ⋅ CT  
C
GND - GND is the power and small signal reference  
ground for all functions.  
0.008 ⋅ RT – 3.83  
0.008 ⋅ RT – 1.71  
⎛
⎝
⎞
⎠
---------------------------------------------  
t
≈ –RT ⋅ CT ⋅ In  
D
OUT - This is the drive output to the power switching  
device. It is a high current output capable of driving the  
gate of a power MOSFET with peak currents of 1.0A. This  
f = 1 ⁄ (t + t  
)
(EQ. 3)  
(EQ. 4)  
C
D
GATE output is actively held low when V  
UVLO threshold.  
is below the  
DD  
D = t ⋅ f  
C
V
- V is the power connection for the device. The  
DD  
The formulae have increased error at higher frequencies  
due to propagation delays. Figure 4 may be used as a  
guideline in selecting the capacitor and resistor values  
required for a given switching frequency for the  
ISL78841, ISL78845ASRH. The value for the ISL78840,  
ISL78843ASRH will be twice that shown in Figure 4.  
DD  
total supply current will depend on the load applied to  
OUT. Total I current is the sum of the operating  
current and the average output current. Knowing the  
operating frequency, f, and the MOSFET gate charge, Qg,  
DD  
FN6991.0  
December 21, 2009  
6
1...3456789...11

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