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5962F9951103V9A

更新时间： 2024-02-08 00:00:28
品牌 Logo 应用领域
英特矽尔 - INTERSIL 驱动信息通信管理接口集成电路驱动器
页数 文件大小 规格书
3页 201K
描述
Radiation Hardened Dual, Inverting Power MOSFET Drivers

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5962F9951103V9A 技术参数

生命周期：Active包装说明：DIE,
Reach Compliance Code：unknown风险等级：5.76
高边驱动器：NO接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-XUUC-N10功能数量：2
端子数量：10最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：UNSPECIFIED
封装代码：DIE封装形状：RECTANGULAR
封装形式：UNCASED CHIP筛选级别：MIL-PRF-38535 Class V
最大供电电压：18 V最小供电电压：12 V
表面贴装：YES温度等级：MILITARY
端子形式：NO LEAD端子位置：UPPER
总剂量：300k Rad(Si) V断开时间：0.35 µs
接通时间：0.35 µs

5962F9951103V9A 数据手册

 浏览型号5962F9951103V9A的Datasheet PDF文件第2页浏览型号5962F9951103V9A的Datasheet PDF文件第3页 
Radiation Hardened Dual, Inverting Power MOSFET  
Drivers  
HS-4423RH, HS-4423EH,  
HS-4423BRH, HS-4423BEH  
Features  
• Electrically screened to DLA SMD # 5962-99511  
• QML qualified per MIL-PRF-38535 requirements  
• EH version acceptance tested to 50krad(Si) (LDR)  
The Radiation Hardened HS-4423RH, HS-4423EH,  
HS-4423BRH, HS-4423BEH are inverting, dual, monolithic  
high-speed MOSFET drivers designed to convert TTL level  
signals into high current outputs at voltages up to 18V.  
• Radiation environment  
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)  
- Latch-up immune  
The inputs of these devices are TTL compatible and can be  
directly driven by our HS-1825ARH PWM device or by our  
ACS/ACTS and HCS/HCTS type logic devices. The fast rise  
times and high current outputs allow very quick control of high  
gate capacitance power MOSFETs in high frequency  
applications.  
- Low dose rate immune  
• I  
PEAK  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (typ)  
• Matched rise and fall times (C = 4300pF) . . . . . . . . 75ns (max)  
L
• Low voltage lock-out feature  
The high current outputs minimize power losses in MOSFETs by  
rapidly charging and discharging the gate capacitance. The  
output stage incorporates a low voltage lock-out circuit that  
puts the outputs into a three-state mode when the supply  
voltage drops below 10V for the HS-4423RH, HS-4423EH and  
7.5V for the HS-4423BRH and HS-4423BEH.  
- HS-4423RH, HS-4423EH, . . . . . . . . . . . . . . . . . . . . . <10.0V  
- HS-4423BRH, HS-4423BEH . . . . . . . . . . . . . . . . . . . . . <7.5V  
• Wide supply voltage range . . . . . . . . . . . . . . . . . . . 12V to 18V  
• Prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .250ns (max)  
• Consistent delay times with V changes  
CC  
Constructed with the Intersil dielectrically isolated Rad Hard  
Silicon Gate (RSG) BiCMOS process, these devices are immune  
to Single Event Latch-up and have been specifically designed  
to provide highly reliable performance in harsh radiation  
environments  
• Low power consumption  
- 40mW with inputs high  
- 20mW with inputs low  
• Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)  
• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V  
Applications  
• Switching power supplies  
• DC/DC converters  
• Motor controllers  
Pin Configuration  
HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH  
(FLATPACK CDFP4-F16)  
TOP VIEW  
NC  
IN A  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
NC  
OUT A  
OUT A  
NC  
GND A  
GND B  
NC  
V
V
CC  
CC  
OUT B  
OUT B  
NC  
IN B  
NC  
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-bonded to their  
same electrical points on the die.  
February 11, 2014  
FN4564.5  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2002, 2014. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
123

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