Datasheet > 5962F1123501VXC

5962F1123501VXC

更新时间： 2023-12-26 09:00:05

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
19页	958K
描述
Asynchronous SRAM

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5962F1123501VXC 数据手册

CYRS1049DV33

Data Retention Characteristics

Over the Operating Range

Parameter

V_DR

I_CCDR

Description

V_CCfor data retention

Data retention current

Conditions ^[5]

Min

2.0

–

Max

–

Unit

–

V_CC= V_DR= 2.0 V,

CE > V_CC– 0.3 V,

V_IN> V_CC– 0.3 V or V_IN< 0.3 V

[6]

t_CDR

Chip deselect to data retention

time

–

[7]

t_R

Operation recovery time

–

Data Retention Waveform

Figure 3. Data Retention Waveform

Data Retention Mode

3.0 V

> 2 V

V_CC

CDR

Notes

5. No input may exceed V + 0.3 V.

6. Tested initially and after any design or process changes that may affect these parameters.

7. Full device operation requires linear V ramp from V to V

> 50 s or stable at V

> 50 s.

CC(min)

Document Number: 001-64292 Rev. *J

Page 7 of 18

1...5 6 789 10 11...19

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