Datasheet > 5962F1123501VXC

5962F1123501VXC

更新时间： 2023-12-26 09:00:05

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
19页	958K
描述
Asynchronous SRAM

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数据手册

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5962F1123501VXC 数据手册

CYRS1049DV33

Capacitance

Parameter ^[3]

Description

Input capacitance

I/O capacitance

Test Conditions

T_A= 25 °C, f = 1 MHz, V_CC= 3.3 V

Max

Unit

C_IN

C_OUT

Thermal Resistance

Ceramic Flat

Package

Parameter ^[3]

Description

Test Conditions

Unit

_JC

Thermal resistance

(junction to case)

Test according to MIL-PRF 38538

3.6

°C/W

AC Test Loads and Waveforms

Figure 2. AC Test Loads and Waveforms ^[4]

All Input Pulses

Z = 50 

3.0 V

Output

90%

10%

90%

10%

50 

1.5 V

30 pF*

GND

* Capacitive load consists

of all components of the

test environment

Fall Time: 1 V/ns

Rise Time: 1 V/ns

(a)

(b)

High-Z Characteristics

R 317

3.3 V

OUTPUT

5 pF

351 

(c)

Notes

3. Tested initially and after any design or process changes that may affect these parameters.

4. AC characteristics (except High Z) are tested using the load conditions shown in Figure 2 (a). High Z characteristics are tested for all speeds using the test load shown

in Figure 2 (c).

Document Number: 001-64292 Rev. *J

Page 6 of 18

1...4 5 678 9 10...19

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