Datasheet > 5962-9669105HUX

5962-9669105HUX

更新时间： 2023-01-03 09:19:14

品牌	Logo	应用领域
美高森美 - MICROSEMI		静态存储器
页数	文件大小	规格书
10页	208K
描述
Standard SRAM, 128KX8, 55ns, CMOS, CDSO32, CERAMIC, SOJ-32

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5962-9669105HUX 数据手册

WMS128K8-XXX

DATA RETENTION CHARACTERISTICS

(TA = -55°C to +125°C)

LOW POWER VERSION ONLY

Parameter

Symbol

Conditions

Units

Max

Min

Typ

Data Retention Supply Voltage

Data Retention Current

V^DR

CS ≥ VCC -0.2V

2.0

5.5

I^CCDR2

VCC = 2V

ORDERING INFORMATION

W M S 128K8 X - XXX X X X

LEAD FINISH:

Blank = Gold plated leads

A = Solder dip leads

DEVICE GRADE:

M= Military Screened

I = Industrial

-55°C to +125°C

-40°C to +85°C

0°C to +70°C

C = Commercial

PACKAGE:

C = 32 Pin Ceramic .600" DIP (Package 300)

CL = 32 Pin Rectangular Ceramic Leadless Chip Carrier (Package 601)

DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary

DJ = 36 Lead Ceramic SOJ (Package 100)

DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary

F = 36 Lead Ceramic Flat Pack (Package 226)

FE = 32 Lead Ceramic Flat Pack (Package 220)

ACCESS TIME (ns)

IMPROVEMENT MARK

L = Low Power for 2V Data Retention

ORGANIZATION, 128K x 8

SRAM

MONOLITHIC

WHITE ELECTRONIC DESIGNS CORP.

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

1...6 7 8910

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