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5962-9669104HYX PDF预览

5962-9669104HYX

更新时间: 2023-02-15 00:00:00
品牌 Logo 应用领域
WEDC 静态存储器
页数 文件大小 规格书
8页 101K
描述
Standard SRAM, 128KX8, 70ns, CMOS, CDIP32, SIDE BRAZED, CERAMIC, DIP-32

5962-9669104HYX 数据手册

 浏览型号5962-9669104HYX的Datasheet PDF文件第2页浏览型号5962-9669104HYX的Datasheet PDF文件第3页浏览型号5962-9669104HYX的Datasheet PDF文件第4页浏览型号5962-9669104HYX的Datasheet PDF文件第5页浏览型号5962-9669104HYX的Datasheet PDF文件第6页浏览型号5962-9669104HYX的Datasheet PDF文件第8页 
WMS128K8-XXX  
DATA RETENTION CHARACTERISTICS  
(TA = -55°C to +125°C)  
LOW POWER VERSION ONLY  
Parameter  
Symbol  
Conditions  
Units  
Max  
Min  
Data Retention Supply Voltage  
Data Retention Current  
VDR  
CS VCC -0.2V  
2.0  
5.5  
V
ICCDR3  
VCC = 2V  
400  
µ
ORDERING INFORMATION  
W M S 128K 8 X - XXX X X X  
LEAD FINISH:  
Blank = Gold plated leads  
A = Solder dip leads  
DEVICE GRADE:  
M= Military Screened  
I = Industrial  
-55°C to +125°C  
-40°C to +85°C  
0°C to +70°C  
C = Commercial  
PACKAGE:  
C = 32 Pin Ceramic .600" DIP (Package 300)  
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary  
DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary  
FE = 32 Lead Ceramic Flat Pack (Package 206)  
ACCESS TIME (ns)  
IMPROVEMENT MARK  
C = Dual Chip Select Device  
L = Low Power for 2V Data Retention  
ORGANIZATION, 128K x 8  
SRAM  
MONOLITHIC  
WHITE MICROELECTRONICS  
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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