Datasheet > 5962-9669104HTX

5962-9669104HTX

更新时间： 2024-01-25 09:12:47

品牌	Logo	应用领域
WEDC		静态存储器内存集成电路
页数	文件大小	规格书
8页	101K
描述
Standard SRAM, 128KX8, 70ns, CMOS, CDSO32, CERAMIC, SOJ-32

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5962-9669104HTX 数据手册

WMS128K8-XXX

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T^A

Min

-55

-65

-0.5

Max

+125

+150

Vcc+0.5

150

Unit

°C

Mode

Standby

Read

Out Disable

Write

Data I/O

High Z

Data Out

High Z

Power

Standby

Active

Operating Temperature

Storage Temperature

Signal Voltage Relative to GND

Junction Temperature

Supply Voltage

T^STG

V^G

Data In

T^J

°C

V^CC

-0.5

7.0

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

V^CC

Min

4.5

Max

5.5

Unit

Supply Voltage

Input High Voltage

Input Low Voltage

V^IH

2.2

VCC + 0.3

+0.8

V^IL

-0.5

CAPACITANCE

(TA = +25°C)

Parameter

Symbol

Condition

IN = 0V, f = 1.0MHz

Package

Speed (ns)

Max

Unit

Input capacitance

C^IN

32 Pin CSOJ, DIP,

70 to 120

Flat Pack Evolutionary

32 Pin CSOJ Revolutionary

70 to 120

Output capicitance

C^OUT

OUT = 0V, f = 1.0MHz

32 Pin CSOJ, DIP,

Flat Pack Evolutionary

32 Pin CSOJ Revolutionary

70 to 120

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter

Sym

Conditions

-70

-85

-100

-120

Units

Min

Max

Min

Max

Min

Max

Min

Max

Input Leakage Current

Output Leakage Current

Operating Supply Current

Standby Current

ILI

ILO

VCC = 5.5, VIN = GND to VCC

µA

CS = VIH, OE = VIH, VOUT = GND to VCC

CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5

CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5

IOL = 2.1mA, Vcc = 4.5

ICC

ISB

1.0

0.4

1.0

0.4

0.6

0.4

0.6

0.4

Output Low Voltage

Output High Voltage

VOL

V^OH

IOH = -1.0mA, Vcc = 4.5

2.4

NOTE: DC test conditions: V^IH= VCC -0.3V, VIL = 0.3V

DATA RETENTION CHARACTERISTICS

(TA = -55°C to +125°C)

Parameter

Symbol

Conditions

-70

Typ

-85

Typ

-100

Typ

-120

Typ

Units

Min

Max

5.5

Min

Max

5.5

Min

Max

Min

Max

Data Retention

Supply Voltage

VDR

CS ≥ VCC -0.2V

2.0

5.5

2.0

5.5

Data Retention

Current

I^CCDR1

VCC = 3V

400

µA

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

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