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Datasheet > 5962-9561322HMC
5962-9561322HMC PDF预览

5962-9561322HMC

更新时间： 2024-02-06 04:49:01
品牌 Logo 应用领域
MICROSS 静态存储器内存集成电路
页数 文件大小 规格书
17页 135K
描述
Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, CERAMIC, LCC-32

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5962-9561322HMC 技术参数

生命周期：Active零件包装代码：DFP
包装说明：DFP,针数：36
Reach Compliance Code：unknownECCN代码：3A001.A.2.C
HTS代码：8542.32.00.41风险等级：5.8
最长访问时间：25 nsJESD-30 代码：R-CDFP-F36
JESD-609代码：e4长度：23.365 mm
内存密度：4194304 bit内存集成电路类型：STANDARD SRAM
内存宽度：8功能数量：1
端子数量：36字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-55 °C
组织：512KX8封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：DFP封装形状：RECTANGULAR
封装形式：FLATPACK并行/串行：PARALLEL
认证状态：Qualified筛选级别：MIL-STD-883
座面最大高度：3.18 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：MILITARY端子面层：GOLD
端子形式：FLAT端子节距：1.27 mm
端子位置：DUAL宽度：12.955 mm
Base Number Matches：1

5962-9561322HMC 数据手册

 浏览型号5962-9561322HMC的Datasheet PDF文件第2页浏览型号5962-9561322HMC的Datasheet PDF文件第3页浏览型号5962-9561322HMC的Datasheet PDF文件第4页浏览型号5962-9561322HMC的Datasheet PDF文件第5页浏览型号5962-9561322HMC的Datasheet PDF文件第6页浏览型号5962-9561322HMC的Datasheet PDF文件第7页 
SRAM  
AS5C4008  
512K x 8 SRAM  
PIN ASSIGNMENT  
(Top View)  
SRAM MEMORY ARRAY  
AVAILABLE AS MILITARY  
32-Pin DIP (CW), 32-Pin LCC (EC)  
32-Pin SOJ (ECJ)  
SPECIFICATION  
• SMD 5962-95600  
• SMD 5962-95613  
• MIL STD-883  
1
2
A18  
A16  
A14  
A12  
A7  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
Vcc  
A15  
A17  
WE\  
A13  
A8  
3
4
FEATURES  
5
• High Speed: 12, 15, 17, 20, 25, 35 and 45ns  
• High-performance, low power military grade device  
• Single +5V ±10% power supply  
6
A6  
7
A5  
A9  
8
A4  
A11  
OE\  
A10  
CE\  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
9
A3  
• Easy memory expansion with CE\ and OE\ options  
• All inputs and outputs are TTL-compatible  
• Ease of upgradability from 1 Meg using the 32 pin  
evolutionary version.  
10  
11  
12  
13  
14  
15  
16  
A2  
A1  
A0  
I/O0  
I/O1  
I/O2  
Vss  
OPTIONS  
• Timing  
MARKING  
12ns access  
15ns access  
17ns access  
20ns access  
25ns access  
35ns access  
45ns access  
-12  
-15  
-17  
-20  
-25  
-35  
-45  
32-Pin Flat Pack (F)  
Vcc  
A15  
A17  
WE\  
A13  
A8  
1
A18  
A16  
A14  
A12  
A7  
32  
2
31  
3
30  
4
29  
5
28  
6
A6  
27  
• Operating Temperature Range  
Military: -55oC to +125oC  
Industrial: -40oC to +85oC  
• Packages  
A9  
7
A5  
26  
XT  
IT  
A11  
OE\  
A10  
CE\  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
8
A4  
25  
9
A3  
24  
10  
11  
12  
13  
14  
15  
16  
A2  
23  
22  
21  
20  
19  
18  
17  
A1  
Ceramic Dip (600 mil)  
Ceramic Flatpack  
Ceramic LCC  
Ceramic SOJ  
• Options  
CW  
F
EC  
ECJ  
No. 112  
No. 304  
No. 209  
No. 502  
A0  
I/O0  
I/O1  
I/O2  
Vss  
2V data retention/ low power  
L
NOTE: Not all combinations of operating temperature, speed, data retention and  
low power are necessarily available. Please contact factory for availability of specific  
part number combinations.  
GENERAL DESCRIPTION  
For more products and information  
please visit our web site at  
www.micross.com  
The AS5C4008 is a 4 megabit monolithic CMOS SRAM, orga-  
nized as a 512K x 8.  
The evolutionary 32 pin device allows for easy upgrades from  
the 1 meg SRAM.  
For flexibility in high-speed memory applications, Micross of-  
fers chip enable (CE\) and output enable (OE\) capabilities. These  
enhancements can place the outputs in High-Z for additional flexibility  
in system design.  
Writing to these devices is accomplished when write enable  
(WE\) and CE\ inputs are both LOW. Reading is accomplished when  
WE\ remains HIGH and CE\ and OE\ go LOW. This allows systems  
designers to meet low standby power requirements.  
All devices operate from a single +5V power supply and all inputs  
are fully TTL-Compatible.  
Micross Components reserves the right to change products or specifications without notice.  
AS5C4008  
Rev. 6.4 01/10  
1
1234567...17

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