Datasheet > 5962-9560005MTX

5962-9560005MTX

更新时间： 2024-11-29 14:39:55

品牌	Logo	应用领域
MICROSS		静态存储器内存集成电路
页数	文件大小	规格书
16页	416K
描述
Standard SRAM, 512KX8, 45ns, CMOS, CDFP36, CERAMIC, FP-36

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

5962-9560005MTX 数据手册

SRAM

AS5C512K8

Austin Semiconductor, Inc.

512K x 8 SRAM

PIN ASSIGNMENT

(Top View)

HIGH SPEED SRAM with

REVOLUTIONARY PINOUT

36-Pin SOJ (DJ & ECJ)

36-Pin CLCC (EC)

AVAILABLE AS MILITARY

SPECIFICATIONS

•SMD 5962-95600

•SMD 5962-95613

•MIL-STD-883

FEATURES

• Ultra High Speed Asynchronous Operation

• Fully Static, No Clocks

• Multiple center power and ground pins for improved

noise immunity

• Easy memory expansion with CE\ and OE\

options

• All inputs and outputs are TTL-compatible

• Single +5V Power Supply +/- 10%

• Data Retention Functionality Testing (Contact Factory)

• Cost Efficient Plastic Packaging

• Extended Testing Over -55ºC to +125ºC for plastics

• Plastic 36 pin PSOJ is fully compatible with the

Ceramic 36 pin SOJ

36-Pin Flat Pack (F)

• 3.3V Future Offering

OPTIONS

• Timing

MARKING

15ns access

17ns access

20ns access

25ns access

35ns access

45ns access

-15

-17

-20

-25

-35

-45

GENERAL DESCRIPTION

• Operating Temperature Ranges

Military (-55^oC to +125^oC)

Industrial (-40^oC to +85^oC)

The AS5C512K8 is a high speed SRAM. It offers flexibility in

high-speed memory applications, with chip enable (CE\) and output

enable (OE\) capabilities. These features can place the outputs in

High-Z for additional flexibility in system design.

• Package(s)

Ceramic LCC

Ceramic Flatpack

Plastic SOJ

Writing to these devices is accomplished when write enable (WE\)

and CE\ inputs are both LOW. Reading is accomplished when WE\

remains HIGH and CE\ and OE\ go LOW.

As a option, the device can be supplied offering a reduced power

standby mode, allowing system designers to meet low standby power

requirements. This device operates from a single +5V power supply

and all inputs and outputs are fully TTL-compatible.

The AS5C512K8DJ offers the convenience and reliability of the

AS5C512K8 SRAM and has the cost advantage of a durable plastic.

The AS5C512K8DJ is footprint compatible with 36 pin CSOJ

package of the SMD 5692-95600.

ECJ

No. 210

No. 307

No. 903

No.503

Ceramic SOJ

• 2V data retention/low power

• Radiation Tolerant (EPI)

L (Consult Factory)

For more products and information

please visit our web site at

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS5C512K8

Rev. 4.0 2/01

12 3 4 5 6 7...16

中文翻译

下载PDF

与5962-9560005MTX相关器件

型号	品牌	获取价格	描述	数据表
5962-9560005MUA	ETC	获取价格	x8 SRAM
5962-9560005MXA	ETC	获取价格	x8 SRAM
5962-9560005MXC	MICROSS	获取价格	Standard SRAM, 512KX8, 45ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
5962-9560005MYA	ETC	获取价格	x8 SRAM
5962-9560005MZA	ETC	获取价格	x8 SRAM
5962-9560005MZC	MICROSS	获取价格	Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, LCC-32
5962-9560006M8A	ETC	获取价格	x8 SRAM
5962-9560006M9A	ETC	获取价格	x8 SRAM
5962-9560006M9C	MICROSS	获取价格	Standard SRAM, 512KX8, 35ns, CMOS, CDFP32, CERAMIC, FP-32
5962-9560006MMA	MICROSS	获取价格	Standard SRAM, 512KX8, 35ns, CMOS, CDSO36, CERAMIC, SOJ-36

与5962-9560005MTX相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

5962-9560005MTX

5962-9560005MTX 数据手册

与5962-9560005MTX相关器件

与5962-9560005MTX相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

5962-9560005MTX

5962-9560005MTX 数据手册

与5962-9560005MTX相关器件

与5962-9560005MTX相关文章

您还可以找

您在本页遇到什么问题？