Datasheet > 5962-9089909MZX

5962-9089909MZX

更新时间： 2024-01-08 12:11:04

品牌	Logo	应用领域
其他 - ETC		闪存内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
27页	208K
描述
MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

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5962-9089909MZX 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	QFP,	针数：	32
Reach Compliance Code：	unknown	ECCN代码：	3A001.A.2.C
HTS代码：	8542.32.00.51	风险等级：	5.74
Is Samacsys：	N	最长访问时间：	90 ns
JESD-30 代码：	R-CQFP-G32	长度：	13.97 mm
内存密度：	1048576 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	32	字数：	131072 words
字数代码：	128000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-55 °C
组织：	128KX8	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装代码：	QFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK	并行/串行：	PARALLEL
编程电压：	12 V	认证状态：	Not Qualified
筛选级别：	MIL-STD-883	座面最大高度：	4.04 mm
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	QUAD	宽度：	11.43 mm
Base Number Matches：	1

5962-9089909MZX 数据手册

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain

the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 41 (see MIL-PRF-38535, appendix A).

3.11 Processing of EEPROMs. All testing requirements and quality assurance provisions herein shall be satisfied by the

manufacturer prior to delivery.

3.11.1 Conditions of the supplied devices. Devices will be supplied in an unprogrammed or clear state. No provision will

be made for supplying programmed devices.

3.11.2 Erasure of EEPROMs. When specified, devices shall be erased in accordance with procedures and

characteristics specified in 4.5.1.

3.11.3 Programming of EEPROMs. When specified, devices shall be programmed in accordance with procedures and

characteristics specified in 4.5.2.

3.11.4 Verification of state of EEPROMs. When specified, devices shall be verified as either written to the specified

pattern or cleared. As a minimum, verification shall consist of performing a read of the entire array to verify that all bits are in

the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure and the device shall be

removed from the lot or sample.

3.12 Endurance. A reprogrammability test shall be completed as part of the vendor's reliability monitors. This

reprogrammability test shall be done for initial characterization and after any design or process changes which may affect the

reprogrammability of the device. The methods and procedures may be vendor specific, but shall guarantee the number of

program/erase endurance cycles listed in section 1.3 herein over the full military temperature range. The vendor's procedure

shall be kept under document control and shall be made available upon request of the acquiring or preparing activity, along

with test data.

3.13 Data retention. A data retention stress test shall be completed as part of the vendor's reliability monitors. This test

shall be done for initial characterization and after any design or process change which may affect data retention. The

methods and procedures may be vendor specific, but shall guarantee the number of years listed in section 1.3 herein over

the full military temperature range. The vendor's procedure shall be kept under document control and shall be made

available upon request of the acquiring or preparing activity, along with test data.

SIZE

STANDARD

5962-90899

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

REVISION LEVEL

SHEET

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

1...7 8 91011 12 13...27

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与5962-9089909MZX相关器件

型号	品牌	描述	获取价格	数据表
5962-9089910MXA	ETC	x8 Flash EEPROM	获取价格
5962-9089910MXX	ETC	MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON	获取价格
5962-9089910MYA	ETC	x8 Flash EEPROM	获取价格
5962-9089910MYX	ETC	MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON	获取价格
5962-9089910QUA	ETC	MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON	获取价格
5962-9089910QXA	ETC	MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON	获取价格

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