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5962-9084202MPA PDF预览

5962-9084202MPA

更新时间： 2024-01-31 09:07:02
品牌 Logo 应用领域
MICROSS /
页数 文件大小 规格书
12页 118K
描述
Operational Amplifier, 1 Func, 180uV Offset-Max, BIPolar, CDIP8, CERAMIC, DIP-8

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5962-9084202MPA 技术参数

生命周期：Active零件包装代码：DIP
包装说明：DIP,针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.08
放大器类型：OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB)：0.0008 µA
标称共模抑制比：114 dB最大输入失调电压：180 µV
JESD-30 代码：R-GDIP-T8JESD-609代码：e0
负供电电压上限：-20 V标称负供电电压 (Vsup)：-15 V
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：CERAMIC, GLASS-SEALED封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
认证状态：Qualified筛选级别：MIL-STD-883
子类别：Operational Amplifier供电电压上限：20 V
标称供电电压 (Vsup)：15 V表面贴装：NO
温度等级：MILITARY端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：DUAL
Base Number Matches：1

5962-9084202MPA 数据手册

 浏览型号5962-9084202MPA的Datasheet PDF文件第6页浏览型号5962-9084202MPA的Datasheet PDF文件第7页浏览型号5962-9084202MPA的Datasheet PDF文件第8页浏览型号5962-9084202MPA的Datasheet PDF文件第9页浏览型号5962-9084202MPA的Datasheet PDF文件第11页浏览型号5962-9084202MPA的Datasheet PDF文件第12页 
TABLE II. Electrical test requirements.  
Subgroups  
Test requirements  
Subgroups  
(in accordance with  
MIL-STD-883,  
(in accordance with  
MIL-PRF-38535, table III)  
method 5005, table I)  
Device  
class M  
Device  
class Q  
Device  
class V  
Interim electrical  
----  
----  
----  
parameters (see 4.2)  
Final electrical  
parameters (see 4.2)  
1,2,3,4, 1/  
5,6,7  
1,2,3,4,  
5,6,7  
1/  
1,2,3,4,  
5,6,7  
1/  
Group A test  
1,2,3,4,5,6,7  
1,2,3,4,5,6,7  
1,2,3,4,5,6,7  
requirements (see 4.4)  
Group C end-point electrical  
parameters (see 4.4)  
1
1
1,2,3,4,5,6,7  
Group D end-point electrical  
parameters (see 4.4)  
1
1
1
Group E end-point electrical  
parameters (see 4.4)  
---  
---  
---  
1/ PDA applies to subgroup 1.  
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured  
(see 3.5 herein).  
a. End-point electrical parameters shall be as specified in table II herein.  
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as  
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to  
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device  
classes must meet the post irradiation end-point electrical parameter limits as defined in table I at  
TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein.  
5. PACKAGING  
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes  
Q and V or MIL-PRF-38535, appendix A for device class M.  
6. NOTES  
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications  
(original equipment), design applications, and logistics purposes.  
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor  
prepared specification or drawing.  
6.1.2 Substitutability. Device class Q devices will replace device class M devices.  
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for  
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-90842  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
REVISION LEVEL  
C
SHEET  
10  
DSCC FORM 2234  
APR 97  
1...789101112

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