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5962-9084202MPA PDF预览

5962-9084202MPA

更新时间： 2024-02-02 07:58:57
品牌 Logo 应用领域
MICROSS /
页数 文件大小 规格书
12页 118K
描述
Operational Amplifier, 1 Func, 180uV Offset-Max, BIPolar, CDIP8, CERAMIC, DIP-8

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5962-9084202MPA 技术参数

生命周期：Active零件包装代码：DIP
包装说明：DIP,针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.08
放大器类型：OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB)：0.0008 µA
标称共模抑制比：114 dB最大输入失调电压：180 µV
JESD-30 代码：R-GDIP-T8JESD-609代码：e0
负供电电压上限：-20 V标称负供电电压 (Vsup)：-15 V
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：CERAMIC, GLASS-SEALED封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
认证状态：Qualified筛选级别：MIL-STD-883
子类别：Operational Amplifier供电电压上限：20 V
标称供电电压 (Vsup)：15 V表面贴装：NO
温度等级：MILITARY端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：DUAL
Base Number Matches：1

5962-9084202MPA 数据手册

 浏览型号5962-9084202MPA的Datasheet PDF文件第4页浏览型号5962-9084202MPA的Datasheet PDF文件第5页浏览型号5962-9084202MPA的Datasheet PDF文件第6页浏览型号5962-9084202MPA的Datasheet PDF文件第8页浏览型号5962-9084202MPA的Datasheet PDF文件第9页浏览型号5962-9084202MPA的Datasheet PDF文件第10页 
TABLE I. Electrical performance characteristics – Continued.  
Conditions  
-55°C ≤ T ≤ +125°C  
Test  
Symbol  
Group A  
subgroups  
Device  
type  
Limits 1/  
Unit  
A
V
= ±15 V, V = 0 V  
CM  
S
unless otherwise specified  
Rising edge, C = 20 pF,  
Min  
0.1  
Max  
Slew rate  
+SR  
7
All  
V/µs  
L
R = 2 kΩ, T = +25°C,  
L
A
V
OUT  
= -5.0 V to +5.0 V,  
measured from –2.5 V to  
+2.5 V  
-SR  
0.1  
Falling edge, C = 20 pF,  
L
R = 2 kΩ, T = +25°C,  
L
A
V
OUT  
= +5.0 V to -5.0 V,  
measured from +2.5 V to  
-2.5 V  
1/ The algebraic convention, whereby the most negative value is a minimum and the most positive is a maximum,  
is used in this table. Negative current shall be defined as conventional current flow out of a device terminal.  
2/ Unless otherwise specified, ±1.2 V ≤ V ≤ ±20 V applies for subgroup 1, ±1.5 ≤ V ≤ ± 20 V applies for subgroups 2 and 3,  
S
S
-13.5 V ≤ V  
≤ +13.5 V at V = ±15 V applies for subgroups 1, 2, and 3.  
S
CM  
3/ If not tested, shall be guaranteed to the limits specified in table I herein.  
4/ Noise voltage density at 10 Hz is sample tested on every lot.  
5/ This parameter is tested on a sample basis only.  
4. VERIFICATION  
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with  
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan  
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in  
accordance with MIL-PRF-38535, appendix A.  
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted  
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in  
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.  
4.2.1 Additional criteria for device class M.  
a. Burn-in test, method 1015 of MIL-STD-883.  
(1) Test condition C. The test circuit shall be maintained by the manufacturer under document revision level control  
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the  
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method  
1015 of MIL-STD-883.  
(2) T = +125°C, minimum.  
A
b. Interim and final electrical test parameters shall be as specified in table II herein.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-90842  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
REVISION LEVEL  
C
SHEET  
7
DSCC FORM 2234  
APR 97  
1...45678910...12

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