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5962-9080304MLX PDF预览

5962-9080304MLX

更新时间： 2024-11-29 20:33:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS OTP只读存储器内存集成电路
页数 文件大小 规格书
14页 246K
描述
OTP ROM, 8KX8, CMOS, CDIP24, 0.300 INCH, CERDIP-24

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5962-9080304MLX 技术参数

生命周期：Obsolete零件包装代码：DIP
包装说明：DIP,针数：24
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.71风险等级：5.17
JESD-30 代码：R-GDIP-T24内存密度：65536 bit
内存集成电路类型：OTP ROM内存宽度：8
功能数量：1端子数量：24
字数：8192 words字数代码：8000
工作模式：ASYNCHRONOUS最高工作温度：125 °C
最低工作温度：-55 °C组织：8KX8
封装主体材料：CERAMIC, GLASS-SEALED封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
并行/串行：PARALLEL认证状态：Not Qualified
筛选级别：MIL-STD-883最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：MILITARY端子形式：THROUGH-HOLE
端子位置：DUALBase Number Matches：1

5962-9080304MLX 数据手册

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1
CY7C261  
CY7C263/CY7C264  
8K x 8 Power-Switched and Reprogrammable PROM  
the CY7C261 automatically powers down into a low-power  
standby mode. It is packaged in a 300-mil-wide package. The  
Features  
• CMOS for optimum speed/power  
• Windowed for reprogrammability  
• High speed  
CY7C263 and CY7C264 are packaged in 300-mil-wide and  
600-mil-wide packages respectively, and do not power down  
when deselected. The reprogrammable packages are  
equipped with an erasure window; when exposed to UV light,  
these PROMs are erased and can then be reprogrammed.  
The memory cells utilize proven EPROM floating-gate  
technology and byte-wide intelligent programming algorithms.  
— 20 ns (Commercial)  
— 25 ns (Military)  
• Low power  
The CY7C261, CY7C263, and CY7C264 are plug-in replace-  
ments for bipolar devices and offer the advantages of lower  
power, superior performance and programming yield. The  
EPROM cell requires only 12.5V for the supervoltage and low  
current requirements allow for gang programming. The  
EPROM cells allow for each memory location to be tested  
100%, as each location is written into, erased, and repeatedly  
exercised prior to encapsulation. Each PROM is also tested  
for AC performance to guarantee that after customer  
programming the product will meet DC and AC specification  
limits.  
— 660 mW (Commercial)  
— 770 mW (Military)  
• Super low standby power (7C261)  
— Less than 220 mW when deselected  
— Fast access: 20 ns  
• EPROM technology 100% programmable  
• Slim 300-mil or standard 600-mil packaging available  
• 5V ± 10% VCC, commercial and military  
• Capable of withstanding greater than 2001V static  
discharge  
• TTL-compatible I/O  
• Direct replacement for bipolar PROMs  
Read is accomplished by placing an active LOW signal on CS.  
The contents of the memory location addressed by the  
address line (A0−A12) will become available on the output lines  
(O0−O7).  
Functional Description  
The CY7C261, CY7C263, and CY7C264 are high-perfor-  
mance 8192-word by 8-bit CMOS PROMs. When deselected,  
Logic Block Diagram  
Pin Configurations  
A
0
O
O
7
A
1
DIP/Flatpack  
Top View  
A
COLUMN  
MULTI-  
PLEXER  
2
PROGRAM-  
MABLE  
ARRAY  
LCC/PLCC (OpaqueOnly)  
Top View  
ROW  
ADDRESS  
6
A
3
V
A
1
24  
23  
22  
CC  
7
A
4
A
8
A
6
2
3
4
A
A
5
O
O
O
A
9
5
4
3
5
3
2 1 2827  
4
26  
25  
A
10  
21  
20  
19  
18  
17  
A
A
6
4
A
10  
A
5
6
7
8
9
4
CS  
5
6
A
3
ADDRESS  
DECODER  
CS  
24  
23  
22  
21  
20  
19  
A
7
A
3
2
A
11  
A
A
11  
2
A
7C261  
7C263  
A
12  
A
8
A
12  
A
7
8
9
A
1
1
7C261  
7C263  
7C264  
O
7
A
A
0
NC  
0
A
9
NC  
O
O
7
O
6
O
O
10  
11  
0
16  
15  
14  
13  
O
6
0
A
O
5
10  
11  
12  
10  
11  
12  
1
1314151617 18  
12  
COLUMN  
ADDRESS  
O
4
O
2
O
1
O
2
A
A
O
3
GND  
POWER DOWN  
(7C261)  
O
0
CS  
For an 8K x 8 Registered PROM, see theCY7C265.  
Cypress Semiconductor Corporation  
Document #: 38-04010 Rev. *B  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Revised December 28, 2002  
1234567...14

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5962-9080305MKX ETC

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5962-9080306MJA WEDC

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