Datasheet > 5962-88662

5962-88662

更新时间： 2023-12-20 18:44:45

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
12页	352K
描述
5.0V 32K x 8 Asynchronous Static RAM

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5962-88662 数据手册

71256S/L

CMOS Static RAM 256K (32K x 8-Bit)

Military, Commercial, and Industrial Temperature Ranges

AC Test Conditions

Input Pulse Levels

GND to 3.0V

Input Rise/Fall Times

5ns

1.5V

Input Timing Reference Levels

Output Reference Levels

AC Test Load

1.5V

See Figures 1 and 2

2946 tbl 09

480Ω

OUT

DATA

OUT

DATA

30pF*

5pF*

255Ω

2946 drw 04

2946 drw 05

Figure 1. AC Test Load

Figure 2. AC Test Load

(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)

*Includes scope and jig capacitances

DC Electrical Characteristics (VCC = 5.0V ± 10%)

IDT71256S

IDT71256L

Typ.

Symbol

|I^LI

Parameter

Test Conditions

Min.

Typ.

Max.

Min.

Max.

Unit

____

Input Leakage Current

CC = Max.,

MIL.

µA

IN = GND to VCC

COM"L & IND.

____

|I^LO

Output Leakage Current

Output Low Voltage

CC = Max., CS = VIH

MIL.

COM"L & IND.

µA

OUT = GND to VCC

____

OL = 8mA, VCC = Min.

OL = 10mA, VCC = Min.

OH = -4mA, VCC = Min.

0.4

0.5

____

Output High Voltage

2.4

2946 tbl 10

Data Retention Characteristics Over All Temperature Ranges

(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)

Typ.⁽¹⁾

Max.

CC @

Symbol

Parameter

Test Condition

Min.

2.0V

3.0V

2.0V

3.0V

Unit

____

CC for Data Retention

2.0

____

Data Retention Current

MIL.

COM'L. & IND.

500

120

800

200

μA

ICCDR

____

CDR

Chip Deselect to Data

Retention Time

CS > VHC

(3)

(2)

____

Operation Recovery Time

tRC

2946 tbl 11

NOTES:

1. TA = +25°C.

2. tRC = Read Cycle Time.

3. This parameter is guaranteed by device characterization, but is not production tested.

Aug.06.20

1 2 345 6 7...12

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