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5962-8852506YX PDF预览

5962-8852506YX

更新时间: 2024-02-22 18:13:40
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
28页 238K
描述
EEPROM, 32KX8, 150ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32

5962-8852506YX 技术参数

生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCN,针数:32
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.83
最长访问时间:150 nsJESD-30 代码:R-CQCC-N32
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:32字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:NO LEAD
端子位置:QUAD最长写入周期时间 (tWC):10 ms
Base Number Matches:1

5962-8852506YX 数据手册

 浏览型号5962-8852506YX的Datasheet PDF文件第5页浏览型号5962-8852506YX的Datasheet PDF文件第6页浏览型号5962-8852506YX的Datasheet PDF文件第7页浏览型号5962-8852506YX的Datasheet PDF文件第9页浏览型号5962-8852506YX的Datasheet PDF文件第10页浏览型号5962-8852506YX的Datasheet PDF文件第11页 
TABLE I. Electrical performance characteristics - Continued.  
Test  
Symbol  
Conditions  
-55°C TC +125°C  
VSS = 0 V,  
Group A  
subgroups types  
Device  
Limits  
Unit  
4.5 V VCC 5.5 V  
Min  
Max  
unless otherwise specified 1/  
Last byte loaded to  
data polling  
tWHEL  
See figure 5 or 6  
9,10,11  
All  
650 µs  
tEHEL 5/ as applicable  
CE setup time  
tELWL 5/ See figure 8  
9,10,11  
9,10,11  
All  
All  
5  
5  
µs  
µs  
5/  
Output set-up time  
tOVHWL  
CE hold time  
tWHEH 5/ │  
9,10,11  
All  
5  
µs  
5/  
OE hold time  
High voltage  
Chip erase  
tWHOH  
VH 5/  
9,10,11  
9,10,11  
9,10,11  
All  
All  
All  
5  
µs  
V  
12  
13  
210 ms  
5/  
tWLWH2  
WE pulse width for tWLWH15/ │  
chip erase  
9,10,11  
All  
10  
ms  
1/ DC and read mode.  
2/ Connect all address inputs and OE to VIH and measure IOLZ and IOHZ with the output under test connected to VOUT  
3/ All pins not being tested are to be open.  
.
4/ Tested initially and after any design or process changes that affect that parameter, and therefore shall be guaranteed to the  
limits specified in table I.  
5/ Tested by application of specified timing signals and conditions, including:  
Equivalent ac test conditions:  
Devices: All.  
Output load: 1 TTL gate and CL = 100 pF (minimum) or equivalent circuit.  
Input rise and fall times 10 ns.  
Input pulse levels: 0.4 V and 2.4 V.  
Timing measurements reference levels:  
Inputs: 1 V and 2 V.  
Outputs: 0.8 V and 2 V.  
6/ During a page write operation the cycle time defined by tWLWH and tWHWL2 shall not be less than 1 µs.  
SIZE  
STANDARD  
5962-88525  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
REVISION LEVEL  
SHEET  
D
8
DSCC FORM 2234  
APR 97  

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