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5962-8670511UA PDF预览

5962-8670511UA

更新时间: 2024-11-23 20:51:47
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
9页 89K
描述
LCC-20, Tube

5962-8670511UA 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:LCC
包装说明:CERAMIC, QCC-20针数:20
Reach Compliance Code:not_compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.23
最长访问时间:25 nsI/O 类型:COMMON
JESD-30 代码:S-CQCC-N20JESD-609代码:e0
内存密度:16384 bit内存集成电路类型:STANDARD SRAM
内存宽度:4湿度敏感等级:1
功能数量:1端子数量:20
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:4KX4
输出特性:3-STATE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装等效代码:LCC20,.3X.43
封装形状:SQUARE封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883最小待机电流:2.2 V
子类别:SRAMs最大压摆率:0.12 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:TIN LEAD端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

5962-8670511UA 数据手册

 浏览型号5962-8670511UA的Datasheet PDF文件第2页浏览型号5962-8670511UA的Datasheet PDF文件第3页浏览型号5962-8670511UA的Datasheet PDF文件第4页浏览型号5962-8670511UA的Datasheet PDF文件第5页浏览型号5962-8670511UA的Datasheet PDF文件第6页浏览型号5962-8670511UA的Datasheet PDF文件第7页 
CMOS Static RAM  
16K (4K x 4-Bit)  
IDT6168SA  
IDT6168LA  
Features  
High-speed (equal access and cycle time)  
CMOStechnology.Thisstate-of-the-arttechnology,combinedwithinno-  
vativecircuitdesigntechniques,providesacost-effectiveapproachfor  
high-speedmemoryapplications.  
Military:25/45ns(max.)  
Industrial:25ns (max.)  
– Commercial:15/20/25ns (max.)  
Low power consumption  
Battery backup operation2V data retention voltage  
(IDT6168LA only)  
Available in high-density 20-pin ceramic or plastic DIP and  
20-pin leadless chip carrier (LCC)  
Produced with advanced CMOS high-performance  
technology  
CMOS process virtually eliminates alpha particle  
soft-error rates  
Bidirectional data input and output  
Military product compliant to MIL-STD-883, Class B  
Access times as fast 15ns are available. The circuit also offers a  
reduced power standby mode. When CS goes HIGH, the circuit will  
automaticallygoto,andremainin,astandbymodeaslongasCSremains  
HIGH.Thiscapabilityprovidessignificantsystem-levelpowerandcooling  
savings. The low-power(LA)versionalsooffers a batterybackupdata  
retention capability where the circuit typically consumes only 1µW  
operating off a 2V battery. All inputs and outputs of the IDT6168 are  
TTL-compatibleandoperatefromasingle5Vsupply.  
The IDT6168 is packaged in either a space saving 20-pin, 300-mil  
ceramic or plastic DIP or a 20-pin LCC providing high board-level  
packingdensities.  
Military grade product is manufactured in compliance with the  
latest revision of MIL-STD-883, Class B, making it ideally suited to  
military temperature applications demanding the highest level of  
performanceandreliability.  
Description  
The IDT6168 is a 16,384-bit high-speed static RAM organized  
as 4K x4. Itis fabricatedusinglDT’s high-performance, high-reliability  
FunctionalBlockDiagram  
A0  
VCC  
GND  
ADDRESS  
DECODER  
16,384-BIT  
MEMORY ARRAY  
A11  
I/O0  
I/O CONTROL  
I/O1  
INPUT  
DATA  
CONTROL  
I/O2  
I/O3  
,
CS  
3090 drw 01  
WE  
FEBRUARY 2001  
1
©2000IntegratedDeviceTechnology,Inc.  
DSC-3090/05  

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