Datasheet > 5962-1821101QXC

5962-1821101QXC

更新时间： 2023-12-06 20:08:48

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
21页	447K
描述
nvSRAM (non-volatile SRAM)

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5962-1821101QXC 数据手册

STK14C88C

Data Retention and Endurance

Over the Operating Range

Parameter

Description

Min

Unit

DATA_R

Data retention

Industrial

Military

Years

NV_C

Nonvolatile STORE operations

Industrial

Military

1,000

100

Capacitance

Parameter ^[8]

Description

Test Conditions

Max

Unit

C_IN

Input capacitance (except HSB) T_A= 25 C, f = 1 MHz, V_CC= V_CC(Typ)

Input capacitance (for HSB)

C_OUT

Output capacitance (except HSB)

Output capacitance (for HSB)

Thermal Resistance

Parameter ^[8]

Description

Test Conditions

32-pin CDIP Unit

_JA

Thermal resistance

(junction to ambient)

Test conditions follow standard test methods and

procedures for measuring thermal impedance, in

accordance with EIA/JESD51.

22.3

C/W

_JC

Thermal resistance

(junction to case)

C/W

AC Test Loads

Figure 3. AC Test Loads

963 

for tri-state specs

963 

5.0 V

OUTPUT

512 

5 pF

30 pF

AC Test Conditions

Input Pulse Levels .................................................0 V to 3 V

Input Rise and Fall Times (10% to 90%) .................... < 3 ns

Input and Output Timing Reference Levels .................. 1.5 V

Note

8. These parameters are guaranteed by design and are not tested.

Document Number: 002-23965 Rev. *A

Page 9 of 21

1...6 7 8910 11 12...21

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