是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | compliant |
风险等级: | 5.65 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最小直流电流增益 (hFE): | 5 | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 1 W | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 1300 ns |
最大开启时间(吨): | 300 ns | VCEsat-Max: | 1.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
5302DG-T60-K | UTC |
获取价格 |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE |
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5302DG-T92-B | UTC |
获取价格 |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE |
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5302DG-T92-K | UTC |
获取价格 |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE |
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5302DG-T92-R | UTC |
获取价格 |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE |
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5302DG-TM3-T | UTC |
获取价格 |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE |
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5302DG-TN3-R | UTC |
获取价格 |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE |
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5302DG-TN3-T | UTC |
获取价格 |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE |
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5302DL-AA3-R | UTC |
获取价格 |
Power Bipolar Transistor |
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5302DL-T60-K | UTC |
获取价格 |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE |
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5302DL-T92-B | UTC |
获取价格 |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE |
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