Datasheet > 5082-2080

5082-2080

更新时间： 2024-01-04 13:50:39

品牌	Logo	应用领域
安捷伦 - AGILENT		二极管
页数	文件大小	规格书
6页	52K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, Silicon,

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数据手册

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5082-2080 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	O-LALF-W2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.60
风险等级：	5.33	Is Samacsys：	N
最小击穿电压：	8 V	外壳连接：	ISOLATED
配置：	SINGLE	最大二极管电容：	1 pF
二极管元件材料：	SILICON	二极管类型：	MIXER DIODE
最大正向电压 (VF)：	0.45 V	频带：	ULTRA HIGH FREQUENCY
JESD-30 代码：	O-LALF-W2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-60 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	最大功率耗散：	0.15 W
认证状态：	Not Qualified	最大反向电流：	0.1 µA
子类别：	Microwave Mixer Diodes	表面贴装：	NO
技术：	SCHOTTKY	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

5082-2080 数据手册

Schottky Barrier Diodes for

General Purpose Applications

Technical Data

1N5711

1N5712

5082-2300 Series

5082-2800 Series

5082-2900

Features

• Low Turn-On Voltage

The 5082-2835 is a passivated

Schottky diode in a low cost glass

package. It is optimized for low

turn-on voltage. The 5082-2835 is

particularly well suited for the

UHF mixing needs of the CATV

marketplace.

Outline 15

0.41 (.016)

0.36 (.014)

As Low as 0.34 V at 1 mA

• Pico Second Switching Speed

• High Breakdown Voltage

25.4 (1.00)

MIN.

Up to 70 V

• Matched Characteristics

Available

1.93 (.076)

1.73 (.068)

The 5082-2300 Series and

5082-2900 devices are unpas-

sivated Schottky diodes in a glass

package. These diodes have

extremely low 1/f noise and are

ideal for low noise mixing, and

high sensitivity detecting. They

are particularly well suited for use

in Doppler or narrow band video

receivers.

Description/Applications

The 1N5711, 1N5712, 5082-2800/

10/11 are passivated Schottky

barrier diodes which use a

patented “guard ring” design to

achieve a high breakdown

voltage. Packaged in a low cost

glass package, they are well suited

for high level detecting, mixing,

switching, gating, log or A-D

converting, video detecting,

frequency discriminating,

4.32 (.170)

3.81 (.150)

CATHODE

25.4 (1.00)

MIN.

DIMENSIONS IN MILLIMETERS AND (INCHES).

sampling, and wave shaping.

Maximum Ratings

Junction Operating and Storage Temperature Range

5082-2303, -2900 .................................................................-60°C to +100°C

1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C

5082-2835 ............................................................................-60°C to +150°C

DC Power Dissipation

(Measured in an infinite heat sink at T_CASE= 25°C)

Derate linearly to zero at maximum rated temperature

5082-2303, -2900 .............................................................................. 100 mW

1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW

5082-2835 ......................................................................................... 150 mW

Peak Inverse Voltage ................................................................................. V_BR

12 3 4 5 6

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与5082-2080相关器件

型号	品牌	描述	获取价格	数据表
5082-2202	AGILENT	SILICON, MEDIUM BARRIER SCHOTTKY,XBAND, MIXER DIODE	获取价格
5082-2203	AGILENT	Mixer Diode, Medium Barrier, X Band, 400ohm Z(V) Max, 6.5dB Noise Figure, Silicon	获取价格
5082-2207	ASI	SCHOTTKY MEDIUM BARRIER DIODE	获取价格
5082-2208	AGILENT	SILICON, MEDIUM BARRIER SCHOTTKY,XBAND, MIXER DIODE	获取价格
5082-2209	ASI	SCHOTTKY MEDIUM BARRIER DIODE	获取价格
5082-2210	AGILENT	Mixer Diode, Medium Barrier, X Band, 500ohm Z(V) Max, 6.5dB Noise Figure, Silicon	获取价格

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