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5082-2207

更新时间: 2024-01-15 19:49:30
品牌 Logo 应用领域
ASI 二极管脉冲光电二极管
页数 文件大小 规格书
1页 25K
描述
SCHOTTKY MEDIUM BARRIER DIODE

5082-2207 技术参数

生命周期:Obsolete包装说明:S-PDMW-F2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.79
配置:SINGLE二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:X BAND
JESD-30 代码:S-PDMW-F2最大噪声指数:6 dB
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:MICROWAVE脉冲输入最大功率:0.125 W
脉冲输入功率最小值:1 W认证状态:Not Qualified
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
肖特基势垒类型:MEDIUM BARRIERBase Number Matches:1

5082-2207 数据手册

  
5082-2207  
SCHOTTKY MEDIUM BARRIER DIODE  
PACKAGE STYLE  
DESCRIPTION:  
The ASI 5082-2207 is a Medium Barrier  
Schottky Diode designed for General  
Purpose Mixer Applications.  
FEATURES INCLUDE:  
Small size  
Low noise fugure  
MAXIMUM RATINGS:  
125 mW @ TA = 25 °C  
-65 °C to +150 °C  
-65 °C to +150 °C  
1000 °C/W  
PDISS  
TJ  
TSTG  
θJC  
NONE  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
TEST CONDITIONS  
MINIMUM  
TYPICAL MAXIMUM  
UNITS  
DB  
NF  
6.0  
400  
DC Load Resistance = 0  
ZIF  
200  
L.O. Power = 1.0 mW  
IF = 30 MHz  
SRW  
1.5:1  
---  
CJ  
TSS  
γ
VR = 0 V  
0.18  
-54  
pF  
dBm  
mV/µW  
20µA Bias  
PIN = -40 dBm  
f = 10 GHz  
6.6  
Video Bandwith = 2.0 MHz  
RV  
1400  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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