Agilent 1N5711, 1N5712, 5082-2300
Series, 5082-2800 Series, 5082-2900
Schottky Barrier Diodes for
General Purpose Applications
Data Sheet
Features
• Low Turn-On Voltage
As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage
Description/Applications
Outline 15
Up to 70 V
The 1N5711, 1N5712, 5082-2800/
10/11 are passivated Schottky
barrier diodes which use a
0.41 (.016)
0.36 (.014)
• Matched Characteristics
Available
patented “guard ring” design to
achieve a high breakdown
25.4 (1.00)
MIN.
voltage. Packaged in a low cost
glass package, they are well suited
for high level detecting, mixing,
switching, gating, log or A-D
converting, video detecting,
frequency discriminating,
1.93 (.076)
1.73 (.068)
4.32 (.170)
3.81 (.150)
CATHODE
sampling, and wave shaping.
The 5082-2835 is a passivated
Schottky diode in a low cost glass
package. It is optimized for low
turn-on voltage. The 5082-2835 is
particularly well suited for the
UHF mixing needs of the CATV
marketplace.
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
The 5082-2300 Series and
Maximum Ratings
5082-2900 devices are unpas-
sivated Schottky diodes in a glass
package. These diodes have
extremely low 1/f noise and are
ideal for low noise mixing, and
high sensitivity detecting. They
are particularly well suited for use
in Doppler or narrow band video
receivers.
Junction Operating and Storage Temperature Range
5082-2303, -2900 .................................................................-60°C to +100°C
1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C
5082-2835 ............................................................................-60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at TCASE = 25°C)
Derate linearly to zero at maximum rated temperature
5082-2303, -2900 .............................................................................. 100 mW
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW
5082-2835 ......................................................................................... 150 mW
Peak Inverse Voltage ................................................................................. VBR