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500S41Y475ZV4E PDF预览

500S41Y475ZV4E

更新时间: 2024-11-26 19:56:31
品牌 Logo 应用领域
约翰逊 - JOHANSON 电容器
页数 文件大小 规格书
2页 65K
描述
Ceramic Capacitor, Multilayer, Ceramic, 50V, 80% +Tol, 20% -Tol, Y5V, -82/+22% TC, 4.7uF, Surface Mount, 1210, CHIP

500S41Y475ZV4E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:, 1210
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8532.24.00.20风险等级:5.65
电容:4.7 µF电容器类型:CERAMIC CAPACITOR
介电材料:CERAMIC高度:2.8 mm
JESD-609代码:e3长度:3.18 mm
安装特点:SURFACE MOUNT多层:Yes
负容差:20%端子数量:2
最高工作温度:85 °C最低工作温度:-30 °C
封装形状:RECTANGULAR PACKAGE封装形式:SMT
包装方法:TR, PLASTIC, 7 INCH正容差:80%
额定(直流)电压(URdc):50 V系列:500(1210)
尺寸代码:1210表面贴装:YES
温度特性代码:Y5V温度系数:-82/+22% ppm/ °C
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形状:WRAPAROUND
宽度:2.41 mmBase Number Matches:1

500S41Y475ZV4E 数据手册

 浏览型号500S41Y475ZV4E的Datasheet PDF文件第2页 
®
TANCERAM  
CHIP  
CAPACITORS  
TANCERAM® chip capacitors can replace tantalum capacitors  
in many applications and offer several key advantages over  
traditional tantalums. Because Tanceram® capacitors exhibit  
extremely low ESR, equivalent circuit performance can often  
be achieved using considerably lower capacitance values.  
Low DC leakage reduces current drain, extending the battery  
life of portable products. Tancerams® high DC breakdown  
voltage ratings offer improved reliability and eliminate large  
voltage de-rating common when designing with tantalums.  
ADVANTAGES  
• Low ESR  
• Low DC Leakage  
• Higher Surge Voltage  
• Reduced CHIP Size  
• Higher Insulation Resistance  
• Non-polarized Devices  
• Improved Reliability  
• Higher Ripple Current  
APPLICATIONS  
• Switching Power Supply Smoothing (Input/Output)  
• Backlighting Inverters  
• DC/DC Converter Smoothing (Input/Output)  
• General Digital Circuits  
Typical ESR Comparison  
Typical Breakdown Voltage Comparison  
10  
100%  
75%  
50%  
25%  
0%  
1.0 μF / 16V  
Tantalum  
1.0 μF / 16V Tantalum  
1
1.0 μF / 16V TANCERAM ®  
1.0 μF / 16V TANCERAM ®  
0.1  
0.01  
0
100  
200  
300  
400  
500  
0.001  
0.01  
0.1  
1
10  
100  
DC Breakdown Voltage  
Frequency (MHz)  
HOW TO  
O
RDER TANCERAM®  
250  
R18  
Y
105  
Z
V
4
E
CASE SIZE  
TERMINATION  
V = Ni barrier w/  
100% Sn Plating  
VOLTAGE  
DIELECTRIC  
CAPACITANCE  
TOLERANCE  
Y5V  
= +80% -20%  
X7R/X5R  
TAPE MODIFIER  
500 = 50 V  
250 = 25 V  
160 = 16 V  
100 = 10 V  
6R3 = 6.3 V  
W = X7R  
X = X5R  
Y = Y5V  
1st two digits are  
significant; third digit  
denotes number of  
zeros.  
Code  
E
T
Type Reel  
Plastic 7”  
See Chart  
Z
Paper  
7”  
MARKING  
4 = Unmarked  
Tape specifications  
conform to EIA RS481  
K
M
=
=
10%  
20%  
474 = 0.47 µF  
105 = 1.00 µF  
P/N written: 250R18Y105ZV4E  
16  
www.johansondielectrics.com  

500S41Y475ZV4E 替代型号

型号 品牌 替代类型 描述 数据表
UMK325F475ZH-T TAIYO YUDEN

类似代替

CAP CER 4.7UF 50V Y5V 1210
C3225Y5V1H475Z/1.60 TDK

功能相似

CAP CER 4.7UF 50V Y5V 1210

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