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5.0SMDJ8.0CAS

更新时间： 2024-01-11 21:00:19
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网测试光电二极管
页数 文件大小 规格书
6页 1040K
描述
Trans Voltage Suppressor Diode,

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5.0SMDJ8.0CAS 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-J2Reach Compliance Code：unknown
风险等级：5.77其他特性：EXCELLENT CLAMPING CAPABILITY, UL APPROVED
最大击穿电压：9.83 V最小击穿电压：8.89 V
击穿电压标称值：9.36 V最大钳位电压：17.6 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE最大正向电压 (VF)：3.5 V
JEDEC-95代码：DO-214ABJESD-30 代码：R-PDSO-J2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：5000 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：BIDIRECTIONAL
最大功率耗散：6.5 W参考标准：IEC-61000-4-2, 4-4
最大重复峰值反向电压：8 V最大反向电流：50 µA
反向测试电压：8 V表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

5.0SMDJ8.0CAS 数据手册

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TransientVoltage Suppression Diodes  
Surface Mount – 5000W > 5.0SMDJ series  
Pb e3  
RoHS  
5.0SMDJ Series  
Description  
Uni-directional  
The 5.0SMDJ series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Bi-directional  
Features  
• 5000W peak pulse power • Excellent clamping  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
capability  
• Low incremental surge  
resistance  
• For surface mounted  
applications to optimize  
board space  
• Typical IR less than 5μA  
when VBR min>22V  
• High temperature  
to reflow soldering  
Agency Approvals  
• Low profile package  
AGENCY  
AGENCY FILE NUMBER  
E230531  
•Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
guaranteed: 260°C/40sec  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• Plastic package is  
flammability rated V-0 per  
Underwriters Laboratories  
• Meet MSL level1, per  
J-STD-020, LF maximun  
peak of 260°C  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Pb-free E3 means 2nd  
level interconnect is  
Pb-free and the terminal  
finish material is tin(Sn)  
(IPC/JEDEC J-STD-  
609A.01)  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
5000  
Unit  
W
Peak Pulse Power Dissipation at  
TL=25OC by 10/1000µs Waveform  
(Fig.2)(Note 1), (Note 2)  
30kV(Air), 30kV (Contact)  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
• Built-in strain relief  
• Glass passivated chip  
junction  
Power Dissipation on Infinite Heat  
Sink atTL=50OC  
PD  
6.5  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
IFSM  
300  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only  
VF  
5.0  
V
OperatingTemperature Range  
TJ  
-65 to 150  
-65 to 175  
°C  
°C  
StorageTemperature Range  
TSTG  
• Fast response time:  
typically less than 1.0ps  
from 0V to BV min  
TypicalThermal Resistance Junction  
to Lead  
°C/W  
RθJL  
RθJA  
15  
75  
TypicalThermal Resistance Junction  
to Ambient  
°C/W  
Applications  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
V
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only,duty cycle=4 per minute maximum.  
Computer, Industrial and Consumer electronic  
applications.  
Additional Infomarion  
Functional Diagram  
Bi-directional  
Datasheet  
Samples  
Resources  
Cathode  
Anode  
Uni-directional  
© 2015 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 11/20/15  
123456

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