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5.0SMDJ45

更新时间： 2024-01-01 06:03:12
品牌 Logo 应用领域
优恩 - UNSEMI 电视
页数 文件大小 规格书
7页 939K
描述
Surface Mount Transient Voltage Suppressors (TVS)

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5.0SMDJ45 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：R-PDSO-J2Reach Compliance Code：unknown
风险等级：5.66Is Samacsys：N
其他特性：EXCELLENT CLAMPING CAPABILITY, UL APPROVED最大击穿电压：55.3 V
最小击穿电压：50 V击穿电压标称值：52.65 V
最大钳位电压：93.9 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
最大正向电压 (VF)：3.5 VJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-J2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：5000 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性：BIDIRECTIONAL
最大功率耗散：6.5 W参考标准：IEC-61000-4-2, 4-4
最大重复峰值反向电压：45 V最大反向电流：2 µA
反向测试电压：45 V表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：J BEND端子位置：DUAL
Base Number Matches：1

5.0SMDJ45 数据手册

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Surface Mount Transient Voltage Suppressors (TVS)  
5.0SMDJ Series  
11 To 440 V  
5000W  
Uni-directional  
Bi-directional  
Description  
The 5.0SMDJ series is designed specifically to protect sensitive electronic  
equipment from voltage transients induced by lightning and other transient  
voltage events.  
Features  
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For surface mounted applications in order to optimize board space  
Low leakage  
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u
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Uni and Bidirectional unit  
Glass passivated junction  
Low inductance  
Excellent clamping capability  
5000W Peak power capability at 10 × 1000µs waveform Repetition  
rate (duty cycle):0.01%  
Functional Diagram  
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Fast response time: typically less than 1.0ps from 0 Volts to VBR min  
Typical IR less than 5μA above 25V.  
High Temperature soldering: 260°C/40 seconds at terminals  
Typical maximum temperature coefficient ΔVBR = 0.1% ×  
VBR@25°C× ΔT  
Bi-directional  
Cathode  
Anode  
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Plastic package has Underwriters Laboratory Flammability 94V-0  
Matte tin lead–free Plated  
Uni-direction  
Halogen free and RoHS compliant  
Typical failure mode is short from over-specified voltage or current  
Whisker test is conducted based on JEDEC JESD201A per its table  
4a and 4c  
Applications  
TVS devices are ideal for the protection of I/O interfaces, VCC  
bus and other vulnerable circuits used in Telecom, Computer,  
Industrial and Consumer electronic applications.  
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IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)  
ESD protection of data lines in accordance with IEC 61000-4-2  
(IEC801-2)  
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EFT protection of data lines in accordance with IEC 61000-4-4  
(IEC801-4)  
Maximum Ratings (TA=25℃ unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note  
PPPM  
5000  
Watts  
1), (Note 2)  
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)  
Power Dissipation on Infinite Heat Sink at TL=75°C  
IPP  
PM(AV)  
IFSM  
See Next Table  
Amps  
Watt  
6.5  
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)  
300  
Amps  
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only  
(Note 4)  
VF  
3.5/5.0  
Voltage  
Operating junction and Storage Temperature Range.  
TJ , TSTG  
-55 to +150  
°C  
Notes:  
1. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2.  
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.  
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.  
4. VF < 3.5V for VBR < 200V and VF< 6.5V for VBR > 201V.  
Electrical Characteristics (TA=25℃ unless otherwise noted)  
UN Semiconductor Co., Ltd.  
www.unsemi.com.tw  
@ UN Semiconductor Co., Ltd. 2013  
Revision October 18, 2013  
1 / 7  
Specifications are subject to change without notice.  
Please refer to www.unsemi.com.tw for current information.  
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