Datasheet > 4N90L-TM3-T

4N90L-TM3-T

更新时间： 2022-02-26 11:05:24

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友顺 - UTC		/
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描述
N-CHANNEL POWER MOSFET

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4N90L-TM3-T 数据手册

4N90

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

UNIT

Drain to Source Voltage

Gate to Source Voltage

Avalanche Current (Note 2)

900

±30

Continuous

I_D

Continuous Drain Current

Avalanche Energy

Pulsed (Note 2)

Single Pulsed (Note 3)

Repetitive (Note 2)

I_DM

E_AS

570

V/ns

E_AR

Peak Diode Recovery dv/dt (Note 4)

TO-220

dv/dt

4.5

140

TO-220F/TO-220F1

TO-220F3

Power Dissipation

(T_C=25°C)

TO-220F2

TO-251/TO-252

TO-3PN

208

1.12

P_D

TO-220

TO-220F/TO-220F1

TO-220F3

0.304

Derate above 25°C

W/°C

TO-220F2

0.322

0.43

TO-251/TO-252

TO-3PN

1.66

Operating Junction Temperature

Storage Temperature

T_J

+150

°C

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=67mH, I_AS=4A, V_DD=50V, R_G=25Ω, Starting T_J=25°C

4. I_SD≤4A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J=25°C



THERMAL DATA

PARAMETER

TO-220/TO-220F

SYMBOL

RATINGS

62.5

UNIT

°C/W

TO-220F1/TO-220F2

TO-220F3

Junction to Ambient

Junction to Case

θ_JA

TO-251/TO-252

TO-3PN

110

TO-220

0.89

TO-220F/TO-22F1

TO-22F3

3.25

θ_JC

°C/W

TO-220F2

3.1

2.3

0.6

TO-251/TO-252

TO-3PN

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-479.F

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