Datasheet > 4N90L-TM3-T

4N90L-TM3-T

更新时间： 2024-01-24 11:38:21

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友顺 - UTC		/
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描述
N-CHANNEL POWER MOSFET

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数据手册

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4N90L-TM3-T 数据手册

4N90

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V, I_D=250µA

900

I_D=250μA,

Breakdown Voltage Temperature Coefficient ∆BV_DSS/∆T_J

1.05

V/°C

Referenced to 25°C

V_DS=900V, V_GS=0V

V_DS=720V, T_C=125°C

V_GS=+30V, V_DS=0V

V_GS=-30V, V_DS=0V

µA

Drain-Source Leakage Current

Gate- Source Leakage Current

I_DSS

100

Forward

Reverse

I_GSS

+100 nA

-100

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

V_DS=V_GS, I_D=250µA

3.0

5.0

4.2

Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

R_DS(ON)V_GS=10V, I_D=2A

2.1

Ω

C_ISS

1000 1400

Output Capacitance

C_OSS

C_RSS

V_DS=25V,V_GS=0V,f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

8.9

V_DS=50V, V_GS=10V, I_D=1.3A

Gate-Source Charge

(Note 1,2)

Gate-Drain Charge

Turn-ON Delay Time

100

220

120

Turn-ON Rise Time

188

V_DD=30V, I_D=0.5A, R_G=25Ω

(Note 1,2)

Turn-OFF Delay Time

Turn-OFF Fall Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

I_S

I_SM

V_SD

1.4

I_S=4A, V_GS=0V

Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-479.F

www.unisonic.com.tw

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