4N600(3600)
Electrical Characteristics (
TC = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Min Typ
Max
Units
VDS=600V
VGS=0V
ID=100µA, VGS=0
VDS=VGS
ID=250µA
Zero Gate Voltage Drain Current
Drain-to-Source Breakdown
Gate Threshold Voltage
100
IDSS
µA
V
600
2
-
-
-
V
4
VGS(TH)
V
Static Drain Voltage
VGS=10V, ID=2.4A
-
1.9
RDS(ON)
IGSS
Ω
Gate-to-Source Forward Leakage VGS=20V
Gate-to-Source Reverse Leakage VGS=-20V
100
-100
NA
Forward Tranconductance
Input Capacitance
Output Capacitance
Reverse Tras. Capacitance
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
VDS=100V, ID =2.4A
2.9
gfs
S
800
110
20
12
18
CISS
COSS
CRSS
tD(ON)
tr
pF
pF
pF
VDS= 25V, VGS=0V
F=1.0 MHZ
VDD=300V
ID=2.4A, RGEN=12Ω
RD=74Ω
NS
53
19
td(off)
tF
Maxim Continuous Drain source Diode Forward Current
4.0
IS
A
V
Drain Source Diode
Forward Voltage
VGS=0V
IS=4A
1.50
VDS (note)
THERMAI CHRACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
5
100
RJC
RJC
°C/W
°C/W
Note: Pulse Test: Pulse With≤ 300 µS, Duty Cycle ≤ 2.0%
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computer simulations and/ or initial prototype evaluation.
Advance Information
- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
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