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4N600(3600) PDF预览

4N600(3600)

更新时间: 2022-11-24 21:47:48
品牌 Logo 应用领域
其他 - ETC 晶体晶体管场效应晶体管
页数 文件大小 规格书
2页 39K
描述
N-Channel Field Effect Transistor

4N600(3600) 数据手册

 浏览型号4N600(3600)的Datasheet PDF文件第1页 
4N600(3600)  
Electrical Characteristics (  
TC = 25°C unless otherwise specified)  
Symbol  
Parameter  
Conditions  
Min Typ  
Max  
Units  
VDS=600V  
VGS=0V  
ID=100µA, VGS=0  
VDS=VGS  
ID=250µA  
Zero Gate Voltage Drain Current  
Drain-to-Source Breakdown  
Gate Threshold Voltage  
100  
IDSS  
µA  
V
600  
2
-
-
-
V
4
VGS(TH)  
V
Static Drain Voltage  
VGS=10V, ID=2.4A  
-
1.9  
RDS(ON)  
IGSS  
Gate-to-Source Forward Leakage VGS=20V  
Gate-to-Source Reverse Leakage VGS=-20V  
100  
-100  
NA  
Forward Tranconductance  
Input Capacitance  
Output Capacitance  
Reverse Tras. Capacitance  
Turn-ON Delay Time  
Turn-ON Rise Time  
Turn-OFF Delay Time  
Turn-OFF Fall Time  
VDS=100V, ID =2.4A  
2.9  
gfs  
S
800  
110  
20  
12  
18  
CISS  
COSS  
CRSS  
tD(ON)  
tr  
pF  
pF  
pF  
VDS= 25V, VGS=0V  
F=1.0 MHZ  
VDD=300V  
ID=2.4A, RGEN=12Ω  
RD=74Ω  
NS  
53  
19  
td(off)  
tF  
Maxim Continuous Drain source Diode Forward Current  
4.0  
IS  
A
V
Drain Source Diode  
Forward Voltage  
VGS=0V  
IS=4A  
1.50  
VDS (note)  
THERMAI CHRACTERISTICS  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
5
100  
RJC  
RJC  
°C/W  
°C/W  
Note: Pulse Test: Pulse With300 µS, Duty Cycle 2.0%  
- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,  
computer simulations and/ or initial prototype evaluation.  
Advance Information  
- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are  
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.  
Preliminary Information  
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit  
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any  
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different  
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.  
LIFE SUPPORT AND NUCLEAR POLICY  
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical  
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without  
the specific written consent of Bay Linear President.  
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556  
www.baylinear.com  

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