Datasheet > 4N60D

4N60D

更新时间： 2024-11-29 14:53:51

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
4页	1056K
描述
场效应晶体管

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

4N60D 数据手册

4N60I/4N60D

4 Amps, 600 Volts N-CHANNEL MOSFET

FEATURES



Robust High Voltage Termination.

Avalanche Energy Specified.

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode.



Diode is Characterized for Use in Bridge Circuits.

I_DSSAnd V_SD(on) Specified at Elevated Temperature.

TO-251

TO-252

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

V_DSS

I_D

Parameter

Value

600

Units

Drain-Source voltage

Drain current continuous

Gate -Source voltage

Avalanche Current ^(Note2)

Power Dissipation

±30

V_GSS

I_AR

P_D

T_A=25℃

1.25

Junction Temperature

Storage Temperature

T_J

150

℃

T_STG

Rθ_JA

Rθ_Jc

-50 ~ +150

100

℃

Thermal Resistance Junction- Ambient Air

Thermal Resistance Junction-Case

℃/W

1.78

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3 4

中文翻译

下载PDF

与4N60D相关器件

型号	品牌	获取价格	描述	数据表
4N60-E	UTC	获取价格	N-CH
4N60G-K08-5060-R	UTC	获取价格	4A, 600V N-CHANNEL POWER MOSFET
4N60G-S-TMS2-T	UTC	获取价格	Power Field-Effect Transistor,
4N60G-S-TQ2-R	UTC	获取价格	Power Field-Effect Transistor,
4N60G-T2Q-T	UTC	获取价格	4A, 600V N-CHANNEL POWER MOSFET
4N60G-TA3-T	UTC	获取价格	4A, 600V N-CHANNEL POWER MOSFET
4N60G-TF1-T	UTC	获取价格	4A, 600V N-CHANNEL POWER MOSFET
4N60G-TF2-T	UTC	获取价格	4A, 600V N-CHANNEL POWER MOSFET
4N60G-TF3-T	UTC	获取价格	4A, 600V N-CHANNEL POWER MOSFET
4N60G-TF3T-T	UTC	获取价格	N-CHANNEL JUNCTIN SILICON FET