Datasheet > 4N60D

4N60D

更新时间： 2023-12-06 20:03:50

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
4页	1056K
描述
场效应晶体管

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4N60D 数据手册

4N60I/4N60D

4 Amps, 600 Volts N-CHANNEL MOSFET

FEATURES



Robust High Voltage Termination.

Avalanche Energy Specified.

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode.



Diode is Characterized for Use in Bridge Circuits.

I_DSSAnd V_SD(on) Specified at Elevated Temperature.

TO-251

TO-252

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

V_DSS

I_D

Parameter

Value

600

Units

Drain-Source voltage

Drain current continuous

Gate -Source voltage

Avalanche Current ^(Note2)

Power Dissipation

±30

V_GSS

I_AR

P_D

T_A=25℃

1.25

Junction Temperature

Storage Temperature

T_J

150

℃

T_STG

Rθ_JA

Rθ_Jc

-50 ~ +150

100

℃

Thermal Resistance Junction- Ambient Air

Thermal Resistance Junction-Case

℃/W

1.78

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3 4

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