Datasheet > 4N600(3600)

4N600(3600)

更新时间： 2022-11-24 21:47:48

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	39K
描述
N-Channel Field Effect Transistor

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4N600(3600) 数据手册

Bay Linear

Inspire the Linear Power

N-Channel Field Effect Transistor

4N600(3600)

Description

Features

Critical DC Electrical parameters

specified at elevated Temp.

•

The Bay Linear n-channel power field effect transistors are

produced using high cell density DMOS technology , These

devices are particularly suited for high voltage applications

such as automotive and other battery powered circuits where

fast switching, low in-line power loss and resistance to

transistors are needed.

Rugged internal source-drain diode

can eliminate the need for external

Zener diode transient suppresser

Super high density cell design for

extremely low R_DS(ON)

•

The TO-220 is offered in a 3-pin is universally preferred for all

commercial-industrial applications at power dissipation level

to approximately to 50 watts. Also, available in a D²surface

mount power package with a power dissipation up to 2 Watts

V_DSS= 600V

Ω

R_{DS (ON)}= 1.9

I_D= 4.0A

Ordering Information

Device

4N600T

4N600S

Package

TO-220

Temp.

0 to 150°C

TO-263 ( D²)

Absolute Maximum Rating

Symbol

Parameter

Max

Unit

Drain Current

-Continues

-Pulsed

4.0

2.5

I_D(T_C=25°C)

I_D(T_C=100°C)

Gate Source Voltage

Total Power Dissipation @ T_C=25°C

Derate above 25°C

Operating and Storage

Temperature Range

V_GSV

P_D

W/°C

±20

0.59

-55 to 150

T_J

T_STG

°C

Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556

www.baylinear.com

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