Datasheet > 4N38.300

4N38.300

更新时间： 2024-01-14 17:05:18

品牌	Logo	应用领域
QT		输出元件光电
页数	文件大小	规格书
6页	90K
描述
Transistor Output Optocoupler, 1-Element, 5300V Isolation,

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技术参数
数据手册

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4N38.300 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.82	其他特性：	UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min：	80 V	配置：	SINGLE
标称电流传输比：	20%	最大暗电源：	50 nA
最大正向电流：	0.08 A	最大绝缘电压：	5300 V
元件数量：	1	最高工作温度：	100 °C
最低工作温度：	-55 °C	光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER

4N38.300 数据手册

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1

H11D2

H11D3

H11D4

4N38

DESCRIPTION

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting

diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage

NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

FEATURES

• High Voltage

- H11D1, H11D2, BV_CER= 300 V

- H11D3, H11D4, BV_CER= 200 V

• High isolation voltage

- 5300 VAC RMS - 1 minute

- 7500 VAC PEAK - 1 minute

• Underwriters Laboratory (UL) recognized File# E90700

ANODE

CATHODE

N/C

BASE

COLLECTOR

EMITTER

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Units

TOTAL DEVICE

T_STG

-55 to +150

°C

Storage Temperature

Operating Temperature

Lead Solder Temperature

Total Device Power Dissipation @ T_A= 25°C

Derate above 25°C

T_OPR

T_SOL

-55 to +100

260 for 10 sec

260

°C

P_D

I_F

3.5

mW/°C

EMITTER

*Forward DC Current

*Reverse Input Voltage

*Forward Current - Peak (1µs pulse, 300pps)

*LED Power Dissipation @ T_A= 25°C

Derate above 25°C

V_R

6.0

3.0

I_F(pk)

150

1.41

mW/°C

P_D

8/9/00

200046A

12 3 4 5 6

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